ALBERT

Notes: Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed. © 2002 American Institute of Physics.

Notes: Abstract:  This paper examines investors’ anticipation and subsequent interpretations of asset write-downs accompanying segment divestitures. Examining long-window returns cumulated over the two years preceding the year of divestiture, we hypothesize and find that investors anticipate write-downs of segment operating assets before divestiture and recognition occurs, with anticipation conditional on the timeliness of the write-down and prior disclosure of the segments’ operating results under segment reporting rules. Short-window returns cumulated over the three days surrounding the announcement of the divestiture confirm that investor interpretations of asset write-downs are similarly contingent on write-down timeliness and prior disclosure.

Notes: A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. P-channel MOSFETs, with the presence of a single stacking fault entirely in the channel region, were measured. The influence of a single stacking fault on device current–voltage characteristics was determined and compared to that of nearby identical devices without stacking faults. It was found that the threshold voltage increased and saturation current decreased, but had low subthreshold leakages. P-channel MOSFETs, with a single stacking fault crossing the gate and penetrating into the source and drain, had high subthreshold leakage currents. © 2000 American Institute of Physics.

Notes: Unlithified and partly lithified carbonate sequences are ideally suited to the application of ground-penetrating radar (GPR), augmented by percussion augering and shallow seismic techniques, all tied to present-day topography using global positioning system (GPS) methods. This methodology provides the first clear information on the distribution and geometry of lithofacies within buried tufa complexes. The approach has been applied to a thick succession of Holocene tufas filling a gorge site along a 3·5-km length of the River Lathkill, north Derbyshire. Earlier studies have demonstrated the presence of up to 16 m of tufas and sapropels associated with two transverse tufa dams (barrages). These strata have been accumulating throughout the Holocene, although tufa developments at present are of minor extent. Internal tufa morphologies are recorded by GPR as ‘bright’, laterally continuous reflections for lithified, concretionary and lithoclast-rich horizons. The ‘brightest’ reflectors occur within well-cemented barrages and delineate core areas and prograding buttress zones. In contrast, unlithified lime muds and sapropels produce low-contrast reflections. Lithostratigraphic control and depth calibration of the GPR profiles was provided by percussion augering at selected sites. Six distinct lithofacies and four secondary barrages are identified in the study. Constructional and destructional events can be identified and correlated within the GPR profile network, and the internal growth morphologies of the barrages are apparent. GPR profiles also clearly define the evolution of the facies geometries. Three phases of tufa development can be recognized within the GPR data and greatly extend our understanding of Holocene tufa-forming processes in valley sites: (a) Early Holocene barrage build-ups but with limited paludal deposition; (b) Middle Holocene ponding and sapropel accumulation under ‘warm’ conditions; and (c) Late Holocene barrage termination and valley levelling, probably coincidental with anthropogenic activity. This type of multidisciplinary approach should be considered as an essential prerequisite to all biostratigraphic and geochemical studies of Holocene freshwater carbonate sites.

Notes: Research on mission statements has shown considerable variability in their value as well as equal disagreement about their value. Mission statements and strategic objectives are often created in the hope that they can help push the organization toward some desired destination. Every person and every organization needs to have a clear destination for their group or organization, but it will require finding better vehicles than simple mission statements. Successful organizations should probably spend 90 percent of their time keeping people focused and 10 percent figuring out how to get there. Ineffective organizations tend to spend 90 percent of their time making rules, regulations, and procedures. Asking good questions is a fine start, but it also takes hard work and continual feedback; otherwise, you end up with a lifeless mission statement. It may not be essential for the entire group to think as one or to reach a complete agreement or singularity about what they are supposed to be about, but the process of continually monitoring and evolving this process is essential.