Publication Date:
2012-02-01
Description:
Author(s): G. Chen, B. Sanduijav, D. Matei, G. Springholz, D. Scopece, M. J. Beck, F. Montalenti, and L. Miglio Ge growth on high-indexed Si (1110) is shown to result in the spontaneous formation of a perfectly {105} faceted one-dimensional nanoripple structure. This evolution differs from the usual Stranski-Krastanow growth mode because from initial ripple seeds a faceted Ge layer is formed that extends down... [Phys. Rev. Lett. 108, 055503] Published Tue Jan 31, 2012
Keywords:
Condensed Matter: Structure, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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