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  • Articles  (144)
  • Oxford University Press  (97)
  • American Institute of Physics (AIP)  (47)
  • 2020-2022  (32)
  • 1990-1994  (96)
  • 1970-1974  (16)
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  • Articles  (144)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1701-1705 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first Raman-scattering studies of the behavior of the intrasubband plasmon mode of a two-dimensional electron gas which is undergoing lateral drift in an applied electric field. The data clearly show the expected Doppler shifts of the modes traveling up- and downstream, together with the expected dependence on the wave vector, but at higher drift velocities, the expected linear shift is distorted because of electron heating effects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5249-5256 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5909-5915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct optical coupling to the plasmon modes of a two-dimensional electron gas in a stratified semiconductor system requires an overlaid grating coupler. Plasmons can be excited with wave vectors equal to integer multiples of the grating wave vector, and the periodic screening by the grating splits these into two modes, symmetric and antisymmetric with respect to the grating profile. We present calculations of the dispersions and optical coupling strengths for several orders of both modes in a typical structure, and show that the splitting and coupling strengths of the higher order modes oscillate with varying grating mark fraction. These effects are discussed in terms of the oscillating field strengths and charge density profiles.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2789-2795 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Modifications to a light scattering apparatus to permit study of liquid surface fluctuations of significantly higher wave number than hitherto are described. Various problems associated with the modified system are discussed. Typical results are presented for capillary wave propagation on the surface of two different fluids, demonstrating the satisfactory functioning of the spectrometer despite these problems.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4784-4789 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast C-V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon-on-insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation-induced positive charge, reverse annealing is observed from both Si-SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field-enhanced emission effects.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6500-6505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1322-1326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-infrared optical response of a structure consisting of a perfectly conducting grating gate on a modulation-doped GaAs/AlGaAs heterojunction has been calculated using the scattering matrix technique. The grating gate allows coupling between the incident radiation and the plasmon resonance of the two-dimensional electron gas (2DEG) in such a system, but also modifies the dispersion relation for the plasmon because of screening by the image charge distribution induced on the grating gate. Using the scattering matrix technique allows this screening effect to be modeled more accurately than has hitherto been possible, and our calculations show that the induced charge is concentrated at the edges of the grating fingers. The sinusoidal profile of the oscillating charge density in the 2DEG distorts so that the maximum amplitude of the oscillation is close to these edges, and the plasmon frequency is determined by the amount of distortion of the plasmon charge density profile and the additional screening gained through the distortion. Plasmon frequencies are calculated for a wide range of lamellar grating mark/space ratios, and are found to lie between the extremes predicted for plasmons in 2DEGs close to a vacuum interface and close to a continuous metal gate.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report far infrared (FIR) studies of plasmons in spatially modulated two-dimensional electron gases (2DEGs) in AlGaAs/GaAs heterostructures using biased overlaid metal gratings, including interdigitated gratings, both as optical couplers and as spatially modulating gates. Comparison of the experimental results with the predictions of scattering matrix calculations of the FIR response of a modulated 2DEG in the presence of a perfectly conducting lamellar grating allow us to deduce the spatial variation of the number density distribution in the 2DEG as a function of grating bias. For the interdigitated grating gates, the 2DEG can be modulated at a period of twice that of the grating fingers by differentially biasing alternate fingers; 2D plasmon resonances have been observed at half-integral values of the grating wave vector G, corresponding to the electrically induced periodicity of the 2DEG modulation itself acting as an optical coupler in addition to the metal grating. The observed G/2 plasmon frequencies decrease with increasing amplitude of the 2DEG number density modulation, in quantitative agreement with those obtained from scattering matrix calculations of the optical response of a modulated 2DEG under a perfectly conducting lamellar grating; calculations of the oscillating charge density profiles show that this occurs because, as the modulation amplitude increases, the oscillation becomes localized in regions of low 2DEG number density which are also under one of the sets of grating fingers, and is therefore better screened.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2562-2571 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results for a high-brightness electron-beam source are compared to results of numerical and analytic calculations. The 4-MV, 5-kA beam is generated from a velvet cathode and focused by a solenoidal magnet. Data for the diode impedance and the beam focusing length and spot size agree well with numerical simulations. The minimum spot size is consistent with a normalized Lapostolle emittance of 0.12 cm rad, yielding a brightness of 3.5×108 A/m2 rad2 . Transverse beam oscillations are observed in streak photographs and are thought to be caused by electromagnetic dipole modes in the diode cavity. The oscillation amplitude is significantly reduced by making the current rise more slowly.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1913-1915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far infrared (FIR) photoconductivity of GaAs/AlGaAs multiquantum wells (MQWs) doped with silicon has been investigated. The spectral response is consistent with extrinsic photoconductivity from shallow donors with an effective Rydberg of approximately 10.5 meV. The time-resolved photoconductivity due to stimulation with a cavity-dump FIR laser is measured. Subnanosecond rise and decay times are implied for the MQWs investigated; these times are shorter than for the corresponding bulk cases. Possible effects of geometric confinement on recombination rates are discussed. For a 150-period MQW, the responsivity at 118 μm is approximately 105 V W−1 .
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