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  • 1995-1999  (41)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7789-7798 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films has been studied with several novel electrode modifications. Doped amorphous silicon is used as a gating layer between the ferroelectric and metal electrode to regulate the type of charge carrier injection during switching of the ferroelectric. This configuration requires a low switching frequency in order to avoid the relaxation effect that arises from the limited charging ability of the semiconductor. In addition, charge depletion in the semiconductor causes a polarization asymmetry that reflects a depolarization field due to incomplete compensation of the polarization charge. Fatigue tests reveal that electron injection is a necessary condition for polarization degradation, whereas hole injection is not. Blocking interfaces by SiO2 or c-oriented Bi4Ti3O12 can also mitigate fatigue, albeit at a reduced polarization level. On the other hand, compensation of Pb loss through PbO undercoat layer has little effect on fatigue. Based on these observations, injected electrons in association with oxygen vacancies generated during cycling are proposed as the defects responsible for fatigue. These defects may impede domain switching by segregation at the electrode interface or at domain boundaries, with an enhanced kinetics because of the lower valence of the partially de-ionized entity. © 1998 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1923-1925 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With an n-type or p-type semiconductor as a top electrode in contact with ferroelectric Pb(Zr0.53Ti0.47)O3 thin film, polarization fatigue has been studied to investigate the effect of charge carrier injection. Electron injection is shown to be correlated with fatigue while hole injection is not. Current blocking by an insulating SiO2 layer prevents fatigue as well. The enhanced mobility of oxygen vacancies, partially de-ionized by association with the injected electrons, is proposed to be the mechanism for the electron effect.© 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4186-4188 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For a class of (Pb, La)(Zr, Ti)O3 ferroelectric thin films, the Merz equation adequately describes the dynamics of switching resistance. A single parameter, activation field, can be used to relate the coercive field throughout the polarization fatigue process. We suggest that the increased switching resistance causes fatigue, and that it could originate from the dielectric degradation of the film. The constitutive equation for the coercive field and its correlation with the switchable polarization offer a tool for fatigue characterization and life prediction. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Shrinkage behavior and crack formation during firing have been investigated for Al2O3/Ce-TZP composites that have been fabricated by colloidal rolling and folding. These composites show improved sinterability and sinter isotropically after repeated rolling. Interface instability in rolling creates corrugated interfaces with large layer waviness; therefore, rolling can substantially alleviate the in-plane sintering constraints, which leads to improved sinterability. A loss of sintering anisotropy also is observed and is directly correlated to the microstructure instability, which is coincident with the laminate-cellular transition. Sintering cracks during heating and thermal cracks during cooling both are limited to the thick Ce-TZP layers in the composites. The critical layer thickness and the normalized crack spacing of the thermal cracks follow the predicted behavior of elasticity theory. Thus, crack-free, high-density Al2O3/Ce-TZP composites with either a laminate or cellular microstructure can be obtained, with a layer thickness of 4-60 µm, via pressureless sintering.
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  • 5
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: To explain the recent experimental observation of liquid-grown silicon nitride (Si3N4) crystals with a concave depression in the center of the (0001) end face, we propose a new growth mechanism and develop an analytical solution for the steady state. The model allows for atoms that diffuse via the liquid to the side surface but demands that the majority of these atoms be transported to the end caps to feed axial growth. The analysis shows that, for a large radius crystal, the redistribution of atoms by surface diffusion on the end caps requires a long relaxation time; hence, a nonequilibrium shape results. For an isolated Si3N4 crystal growing in a liquid environment, the shape of the end cap is largely determined by the ratio of the supersaturation to the equilibrium surface potential, which is inversely proportional to the crystal radius. A large shape distortion is predicted to occur during the growth stage for large-radius crystals and during the coarsening stage for a population of crystals with a large size distribution. This mechanism ceases to operate when the liquid flux to the side surface is blocked, as in silicon nitride ceramics, but is otherwise insensitive to factors such as radial growth kinetics and liquid diffusivity.
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  • 6
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Two solution-based methods, metallo-organic decomposition and sol—gel processes, were used to study the effects of precursor solution type on the microstructure evolution and texture development of oriented PZT films. Microstructure development and perovskite content are strongly dependent on the heating rate. Fast heating rate forms a dense fine-grained microstructure with (111) orientation. Intermediate-temperature pyrolysis followed by a fast heating rate forms clustered or island structures of submicrometer grains with (100) orientation. Intermediate-temperature pyrolysis followed by a very slow heating rate forms larger spherical rosettes with random orientations. Pt5–7Pb is a (111) textured transient intermetallic phase that nucleates PZT(111) texture. PbO is a (001) textured layer compound that nucleates PZT(100) texture. The texture selection of PZT films is independent of precursor systems but sensitive to the film thickness especially when sol—gel precursors and oxidizing atmosphere are used. Correlation and comparison of oriented sol—gel and MOD PZT films with electrical properties are also made.
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  • 7
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Phase diagrams on the α′-SiAlON plane have been investigated for ytterbium-, yttrium-, and neodymium-containing systems at different temperatures. Phase relationships between α′-SiAlON, β′-SiAlON, AlN polytypoids, and liquid/grain-boundary phases have been determined. The stability region of the α′-SiAlON phase increases as the temperature increases and the ionic size of the rare-earth cation decreases. Meanwhile, the solubility of aluminum and oxygen in β′-SiAlON varies with the solubility of aluminum and oxygen in α′-SiAlON, which causes migration of all the phase lines on the α′-plane toward the nitrogen-rich side at lower temperatures and with larger modifying cations. These systematic variations of the phase relationships fully explain the occurrence of α′→β′ reverse transformations that are sometimes observed in this system.
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  • 8
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Randomly and c-oriented SrBi2Nb2O9 thin films have been obtained by a metalorganic decomposition (MOD) method using a highly c-oriented Bi4Ti3O12 layer as a template. This templating procedure is generally applicable to other layered perovskites, and it has the advantage of lowering the temperature for crystallization and texture selection for these thin films. Moreover, the c-oriented Bi4Ti3O12 template can serve as a bottom electrode at the same time. Ferroelectric and dielectric properties measured for SrBi2Nb2O9 films of different orientations reveal strong anisotropy following the general trend known for other layered perovskites. Systematic differences in polarization and coercive field can be consistently explained in terms of the different m values and the lack of lone-pair electrons. The latter contribute to a higher polarization and a higher coercive field for SrBi2Nb2O9 thin films.
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  • 9
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Ferroelectric thin films of bismuth-containing layered perovskite PbBi2Nb2O9 have been prepared by a metalorganic decomposition (MOD) method. Random and highly c-oriented films of the same starting composition have been obtained under different intermediate- and high-temperature heat treatments. A comparison of their crystallization and properties with those of Bi4Ti3O12 films reveals similar trends that are common to bismuth-containing Aurivillius compounds. Heterogeneous nucleation of the perovskite phase either on the pyrochlore (444) plane because of lattice matching or on the substrate surface because of lower interfacial energy is proposed as the cause of orientation selection during crystallization. The different thickness of the pseudoperovskite subunits in these layered compounds may be responsible for the systematic difference in the anisotropic ferroelectric properties. Smaller polarization and higher coercive field are expected for PbBi2Nb2O9, which has thinner pseudoperovskite units than Bi4Ti3O12.
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  • 10
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Using intermediate, liquid-forming compositions in the (Y,La)2O3-AlN system as additives, fully dense Si3N4 ceramics with high strength at high temperature have been obtained by pressureless sintering. The ceramics contain rod-shaped β-Si3N4 with M′ or K′ solid solutions as grain-boundary phases. The strength of these ceramics is 1150 MPa at 1200°C, and the room-temperature toughness is maintained at }7 MPa·m1/2. Phase relations that are pertinent to the new additive compositions are delineated to rationalize their beneficial effects on sinterability and mechanical properties.
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