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  • American Physical Society  (81)
  • American Institute of Physics (AIP)  (42)
  • Tetra Tech, Inc.
  • 2020-2022  (18)
  • 1995-1999  (108)
  • 1
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    Tetra Tech, Inc. | Lafayette, CA
    In:  sujoy.roy@tetratech.com | http://aquaticcommons.org/id/eprint/20754 | 17795 | 2016-06-14 20:01:33 | 20754 | Tetra Tech, Inc.
    Publication Date: 2021-07-12
    Description: Prepared for San Luis and Delta Mendota Water Authority (Los Banos, CA) and State Water Contractors (Sacramento, CA).
    Keywords: Agriculture ; Engineering ; Environment ; Management ; California ; Sacramento River ; San Joaquin River ; San Francisco Bay
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
    Format: 229
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  • 2
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    Tetra Tech, Inc. | Lafayette, CA
    In:  sujoy.roy@tetratech.com | http://aquaticcommons.org/id/eprint/20755 | 17795 | 2016-06-13 21:21:57 | 20755 | Tetra Tech, Inc.
    Publication Date: 2021-07-12
    Description: Prepared for State Water Project Contractors Authority (SWPCA).
    Keywords: Agriculture ; Engineering ; Environment ; Management ; California ; Sacramento River ; San Joaquin River
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
    Format: 191
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  • 3
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    Tetra Tech, Inc. | Lafayette, CA
    In:  sujoy.roy@tetratech.com | http://aquaticcommons.org/id/eprint/20757 | 17795 | 2016-06-13 21:08:23 | 20757 | Tetra Tech, Inc.
    Publication Date: 2021-07-12
    Description: Addendum to reports dated April12, 2013, and April 18, 2014. Final report. Prepared for Metropolitan Water District of Southern California (Sacramento, CA).
    Keywords: Agriculture ; Engineering ; Environment ; Management ; California ; Sacramento River ; San Joaquin River ; San Francisco Bay
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
    Format: 127
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4018-4022 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-section transmission electron microscopy has been applied to study the growth kinetics of oxide of WSi2 on (001)Si and polycrystalline silicon (poly Si) in the dry oxidation process. The linear activation energy and the parabolic activation energy of WSi2 on (001)Si were found to be 0.8±0.2 and 1.0±0.2 eV for samples dry oxidized at 800–890 °C for 10–60 min, respectively. On the other hand, the linear activation energy and parabolic activation energy of WSi2 on polycrystalline silicon for samples dry oxidized at 800–890 °C for 10–60 min were 1.0±0.2 and 1.8±0.2 eV. The linear activation energy is attributed to the diffusion of Si atoms from the substrate to the reaction interface. The different parabolic activation energies of 1.0 and 1.8 eV for WSi2 on (001)Si and poly Si, respectively, indicate significant difference in diffusion of O2 through grown SiO2. It is conceivable that stress generated during oxidation and the amount of fluorine atoms, introduced during the low pressure chemical vapor deposition process, present in the silicide layer and grown oxide, can influence the oxide quality and oxidation kinetics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5030-5032 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The giant magnetoresistance (GMR) effects in sandwiched Co/Cu/Co and Co/CuMn/Co structures have been investigated. The GMR oscillates with the spacer thickness for both cases, but is nearly antiphased. With diluted Mn atoms in the Cu spacer, the GMR curve as a function of the magnetic field changes a lot, and the saturation/switching field for GMR can be reduced greatly compared with that in Co/Cu/Co systems. This may indicate one way to obtain a highly sensitive GMR. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alpha-driven toroidal Alfvén eigenmodes (TAEs) are observed as predicted by theory in the post-neutral beam phase in high central q (safety factor) deuterium–tritium (D–T) plasmas in the Tokamak Fusion Test Reactor (TFTR) [D. J. Grove and D. M. Meade, Nucl. Fusion 25, 1167 (1985)]. The mode location, poloidal structure, and the importance of q profile for TAE instability are discussed. So far no alpha particle loss due to these modes was detected due to the small mode amplitude. However, alpha loss induced by kinetic ballooning modes (KBMs) was observed in high-confinement D–T discharges. Particle orbit simulation demonstrates that the wave–particle resonant interaction can explain the observed correlation between the increase in alpha loss and appearance of multiple high-n (n≥6, n is the toroidal mode number) modes.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1340-1345 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of alloy composition on the formation temperature and electrical resistivities of C54 titanium germanosilicide formed during the Ti/Si1−xGex (x=0, 0.3, 0.4, 0.7, 1) solid state reaction have been investigated. Ti5(Si1−yGey)3, C49– and C54–Ti(Si1−zGez)2 were observed to form in the Ti/Si1−xGex (x≥0.4) systems. On the other hand, Ti6(Si1−yGey)5 and C54–Ti(Si1−zGez)2 were found in the Ti/Si1−xGex (x[greater, double equals]0.7) systems. For both cases, the relationship of x〉y〉z was found. The appearance and agglomeration temperature of low-resistivity C54–Ti(Si1−zGez)2 were both found to decrease with the Ge concentration. The resistivities of C54–Ti(Si1−zGez)2 were measured to be 15–20 μΩ/cm. The segregation of Si1−wGew (w〉x) was found in all samples annealed above 800 °C. The effects of thermodynamic driving force, kinetic factor, and composition of the micro-area are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3630-3635 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) has been achieved by depositing a 2-nm-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si (a-Si) layer at room temperature followed by annealing at 700 °C in ultrahigh vacuum. The thickness of the a-Si was selected to be such that the consumption of Si atoms from the substrate is minimized by taking into account the formation of an amorphous interlayer at the Dy/Si(111) interface. Based on our experimental findings, a new mechanism for the formation of pinhole is proposed. The Stranski–Krastanov growth behavior of epitaxial DySi2−x on Si(111) by solid phase epitaxy leads to the apparently random formation of a high density of recessed regions at the initial stage of silicidation. Polycrystalline DySi2−x was found to be present at the areas inside and epitaxial DySi2−x outside the recessed regions. Large numbers of Si atoms from the substrate can therefore diffuse through the recessed regions. As a result, the depth and size of the recessed regions increase with annealing time. Finally, the DySi2−x thin layer inside the recessed regions with higher interface energy is thermally unstable and breaks apart to form pinholes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have utilized a "multilayer'' monochromator (a pair of layered synthetic microstructures) in small-angle x-ray scattering/diffraction studies of biological materials. Many biological applications of the SAXS/D technique, in particular time-resolved studies, are often limited by the flux available to experiments. The wider energy bandpass of the multilayer monochromator provides a higher beam flux by a factor of 10 or more, compared with that of the Si(111) double-crystal monochromator. At the SSRL BL 4-2 SAXS/D facility, two types of multilayers have been used: Mo/C on Si substrate, fabricated at Lawrence Berkeley Laboratory [S. Brennan et al., Nucl. Instrum. Methods Phys. Res. A 347, 417 (1994)] and Mo/B4C on Si substrate, obtained from Osmic, Inc. The energy bandpass of the former multilayer is about 150 eV at 10 keV, and that of the latter is expected to be slightly wider. A pair of the latter multilayers gives 8 x 1011 photons/s in a beam size 1 x 2 mm2 (FWHM) at a photon beam energy of 9 keV and a SPEAR ring current of 85 mA. We will present excellent quality diffraction/scattering patterns from muscle fibers and protein solutions that show no significant smearing artifacts due to the wider energy bandpass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5256-5258 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electronic structure and optical properties, in the photon energy range of 3.0–4.5 eV, of sputtered Co/Ag multilayers with a scanning ellipsometer and Kerr spectrometer. It is found for the multilayer series Co(1.2 nm)/Ag and Co/Ag with dCo/dAg=2/3 that the screened plasma frequency ωp* of the multilayers and the interband transition frequency ω0 for L3→L2′ (d band to Fermi surface near the L point) in the Ag layers shift towards lower energy with increasing Ag layer thickness or modulation wavelength. For the second series of samples, the Kerr rotation peak also shifts towards lower energy with increasing modulation wavelength. For a third series of Co/Ag(1.3 nm) multilayers, only ω0 moves towards lower energy with an increasing Co layer thickness. The variation of ω0 is not easily explained in terms of internal strains and changes of the lattice constants in the Ag layers. Further theoretical analysis is needed. © 1997 American Institute of Physics.
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