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  • American Institute of Physics (AIP)  (13)
  • American Meteorological Society  (10)
  • PANGAEA
  • 2020-2022  (1)
  • 1995-1999  (23)
  • 1950-1954
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  • 1
    Electronic Resource
    Electronic Resource
    Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3786-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic Ga1−xInxN/GaN single heterostructures in the composition range 0〈x〈0.2 have been investigated by photoreflectance and photoluminescence spectroscopy. Strong Franz–Keldysh oscillations near the band gap of the ternary film are observed and attributed to a large constant piezoelectric field of up to 0.63 MV/cm. This allows an accurate determination of the electric field. A significant redshift between the optical band gap from photoreflectance and the luminescence maximum is observed. Luminescence is proposed to originate in the indirect transitions between the electric field tilted band edges in GaInN. The presence of this field is expected to dominate the bandstructure and the recombination and transport processes in strained nitride structures. We find no evidence for large inhomogeneities or phase separation in this material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369749
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  • 2
    Electronic Resource
    Electronic Resource
    Design and construction of a nanoelectrospray ion source for a triple quadrupole mass spectrometer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2257-2261 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and construction of a nanoelectrospray ion source for a triple quadrupole mass spectrometer that is used for identification and analysis of minimum peptide amounts is described. This interface exhibits several improvements over commercially available devices: a new capillary holder that allows very simple loading and placement of the spray capillary, and a rotary stage that enables reproducible adjustment of the capillary's angle at the orifice of the mass spectrometer. We also introduced a pressure-regulating system for fast and reproducible adjustment of the static backing air pressure onto the sample solution in the spray capillary. Furthermore, an electric safety circuit increases handling and operation safety of the nanoelectrospray interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149749
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5404-5411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low-energy electron diffraction (LEED), x-ray photoelectron diffraction (XPD), and x-ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0〈x〈1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core-level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359721
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  • 4
    Electronic Resource
    Electronic Resource
    Optical band gap in Ga1−xInxN (0〈x〈0.2) on GaN by photoreflection spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1994-1996 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical band gap in 40 nm Ga1−xInxN/GaN single heterostructures is investigated in the composition range 0〈x〈0.2 by photoreflection spectroscopy (PR) at room temperature and compared with photoluminescence (PL) data. Clear PR oscillations at the GaInN band gap are observed as originating in the large piezoelectric field. Effective band gap bowing parameters b are derived for pseudomorphically stressed GaInN on GaN: b=2.6 eV (PR) and b=3.2 eV (PL in localized states). Using experimental deformation potentials of GaN, b=3.8 eV is extrapolated for the optical band gap in relaxed GaInN material. Previously reported smaller values are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122346
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of GaN grown at high rates on sapphire and on 6H–SiC (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2716-2718 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick GaN films were deposited with growth rates as high as 250 μm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on (0001) sapphire and on (0001) 6H–SiC were compared in terms of their structural and optical properties. Considering x-ray rocking curve full width at half-maximum (FWHM: 420 arcsec), photoluminescence linewidths of the excitons (FWHM: 3 meV at 6 K and 100 meV at 300 K), free electron concentration, defect related luminescence, and the homogeneity of these properties, we find superior values for films grown on SiC. For both substrate materials we find an optimum growth rate window of 40–80 μm/h. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117688
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1691-1693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified piezoelectric fields in strained GaInN/GaN quantum well p-i-n structures using the quantum-confined Stark effect. The photoluminescence peak of the quantum wells showed a blueshift with increasing applied reverse voltages. This blueshift is due to the cancellation of the piezoelectric field by the reverse bias field. We determined that the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on sapphire substrate. In addition, from the direction of the field, the growth orientation of our nitride epilayers can be determined to be (0001), corresponding to the Ga face. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122247
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 830-831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed photoluminescence of Al1−xInxN films. The films were grown on GaN by atmospheric pressure metalorganic vapor phase epitaxy. GaN was grown on a c-plane sapphire substrate with a low-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown that each spectral peak shifts with alloy composition x and that Al1−xInxN heteroepitaxial films are not macroscopically in phase separation and are constituted in the wurzite structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122015
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  • 8
    Electronic Resource
    Electronic Resource
    Dynamics of bound-exciton luminescences from epitaxial GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 415-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free- and bound-exciton luminescences of GaN epitaxial layers grown by a sublimation technique on 6H-SiC substrates were investigated using time-integrated and time-resolved photoluminescence measurements at low temperatures. Lifetimes were determined for the donor-bound exciton at 3.4722 eV and for two acceptor-bound excitons with energies of 3.4672 eV and 3.459 eV. On the basis of our results we obtain an upper limit of the free-exciton oscillator strength of 0.0046 for GaN. Luminescences between 3.29 eV and 3.37 eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface. Free excitons are captured by these centers within 20 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116703
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  • 9
    Electronic Resource
    Electronic Resource
    Strongly localized excitons in gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2556-2558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II–VI compounds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116182
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2547-2549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1(LO) phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer layer manifests itself in clear features of the AlN phonons. The A1(LO) phonon mode energy is determined in AlxGa1−xN for x≈0.15. Raman spectra confirm our findings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116179
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