Publication Date:
2016-10-12
Description:
Author(s): F. Fedichkin, T. Guillet, P. Valvin, B. Jouault, C. Brimont, T. Bretagnon, L. Lahourcade, N. Grandjean, P. Lefebvre, and M. Vladimirova Optoelectronic hardware based on excitons (weakly bound electron-hole pairs) would combine the processing speed of photons with the integration density of modern electronics. Practical devices need to work at room temperature, though, where thermal energy can wreck excitons before they travel far enough to transmit information usefully. The authors demonstrate propagation of indirect excitons in polar (Al,Ga)N/GaN quantum wells over distances of several micrometers at 300 K. These results point the way to working devices based on gate-controlled exciton transport in wide-band-gap semiconductors. [Phys. Rev. Applied 6, 014011] Published Wed Jul 20, 2016
Electronic ISSN:
2331-7019
Topics:
Physics
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