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  • American Institute of Physics (AIP)  (118)
  • 2020-2020
  • 1995-1999  (90)
  • 1985-1989  (28)
  • 1970-1974
  • 1
    Electronic Resource
    Electronic Resource
    Extreme mode selectivity in a dissociating van der Waals molecule: Complexes of aminotetrazine and argon (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7302-7303 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of aminotetrazine-Ar and aminotetrazine-Ar2 was studied using supersonic jet spectroscopy. Excitation of aminotetrazine-Ar to the levels 16b2, 16a2, and 6a1 (429, 505, and 606 cm−1 vibrational energy, respectively) produced photodissociation lifetimes that differed by more than two orders of magnitude. Excitation of these three levels in aminotetrazine-Ar2 caused large changes in the branching ratio between the two dissociation products, aminotetrazine-Ar and aminotetrazine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457299
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  • 2
    Electronic Resource
    Electronic Resource
    Study of the electronic-to-vibrational energy transfer in the quenching process of Na*(3 2P) with N2(1Σ+g,v=0). A quantal close coupling calculation (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 155-161 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electronic-to-vibrational energy transfer has been studied by solving numerically the close-coupling equations, in the T-shape configuration, on the two lowest electronic states of the Na–N2 system. The diabatic potential surfaces were taken from Archirel and Habitz while the interelectronic coupling was modeled by different Gaussian-type functions. Different sets of parameters for the coupling were used in order to study the final vibrational distributions of N2. Finally, partial quenching probabilities are presented and compared with previous theoretical and experimental works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457494
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Observation of a new chromium-related complex in GaAs:Cr [J. Appl. Phys. 55, 4356 (1984)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 650-650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335510
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  • 4
    Electronic Resource
    Electronic Resource
    Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4322-4325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371364
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  • 5
    Electronic Resource
    Electronic Resource
    Transmission properties at microwave frequencies of two-dimensional metallic lattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1177-1180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transmission properties of different metallic photonic lattices (square and rectangular) have been experimentally studied. A numerical algorithm based on time domain finite differences has been used for simulating these photonic structures. The introduction of defects in the two-dimensional metallic lattice modifies its transmission spectrum. If metal rods are eliminated from (or added to) the lattice, extremely narrow peaks are observed at some particular frequencies below (or above) the band pass edge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370866
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of SrBi2Nb2O9 thin films deposited on YBa2Cu3O7−δ and Nb doped SrTiO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 960-964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the crystal structure and the ferroelectric properties of SrBi2Nb2O9 (SBN) thin films with YBa2Cu3O7−δ (YBCO) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBCO and SBN were prepared by dc and rf sputtering, respectively, on SrTiO3 substrates. In a second layout we used a semiconducting Nb doped (0.05 wt % Nb) SrTiO3 (N-STO) substrate as the bottom electrode. The crystal structure of the films was characterized by x-ray diffraction. Since the SBN films exhibit a perfect c-axis oriented growth without the (115) phase the hysteresis loop measurements do not indicate ferroelectric behavior of the SBN films. The diode with a N-STO bottom electrode reveals, for a positive and negative applied voltage, a depletion and accumulation of the carrier density, respectively. The time dependent polarization and depolarization current can be described by a power law (Curie-von Schweidler). The conductivity as a function of applied voltage can be explained by the Schottky effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370832
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  • 7
    Electronic Resource
    Electronic Resource
    Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370747
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  • 8
    Electronic Resource
    Electronic Resource
    Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4800-4802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370486
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  • 9
    Electronic Resource
    Electronic Resource
    Multiseries Lie groups and asymptotic modules for characterizing and solving integrable models (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 1662-1673 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A multiseries integrable model (MSIM) is defined as a family of compatible flows on an infinite-dimensional Lie group of N-tuples of formal series around N given poles on the Riemann sphere. Broad classes of solutions to a MSIM are characterized through modules over rings of rational functions, called asymptotic modules. Possible ways for constructing asymptotic modules are Riemann–Hilbert and ∂¯ problems. When MSIM's are written in terms of the "group coordinates,'' some of them can be "contracted'' into standard integrable models involving a small number of scalar functions only. Simple contractible MSIM's corresponding to one pole, yield the Ablowitz–Kaup–Newell–Segur (AKNS) hierarchy. Two-pole contractible MSIM's are exhibited, which lead to a hierarchy of solvable systems of nonlinear differential equations consisting of (2+1)-dimensional evolution equations and of quite strong differential constraints.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528251
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  • 10
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas effect in indium-doped PbTe films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 330-332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations in the magnetoresistance were observed in n-type, (111)-oriented PbTe films doped with approximately 0.25 at. % indium. Analysis of the data led to a Dingle temperature of 9±1 K and a transverse effective mass of 0.049±0.0006 me with a carrier concentration of 7.0×1024 m−3. It was found that the substrate-induced strain caused significant carrier transfer to the valley with main axis perpendicular to the film plane. Unexplained frequencies observed may indicate the occurrence of a phase transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334809
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