Publication Date:
2014-09-27
Description:
X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (Δ E V ) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2 p 3/2 and Sn 3 d 5/2 energy levels as references, the value of Δ E V was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (Δ E C ) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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