Publikationsdatum:
2018-10-02
Beschreibung:
Author(s): Amir Shirkhorshidian, John King Gamble, Leon Maurer, Stephen M. Carr, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Erik Nielsen, Noah Tobias Jacobson, Michael P. Lilly, and Malcolm S. Carroll Efficient characterization and modeling of gate-defined potential barriers is key to engineering tomorrow’s quantum-dot-based computing devices. Although a number of models exist, many factors are still not fully understood, such as the dependence of the barrier on gate voltage for a wide range of bias, and the effect of neighboring electrodes. The authors use transport spectroscopy to characterize a MOS tunnel barrier, and analyze the barrier using a quasianalytic model that includes cryogenic and quantum confinement effects. The barrier shows different regimes of voltage dependence, and this result provides a path toward compact modeling of tunnel junctions in quantum devices. [Phys. Rev. Applied 10, 044003] Published Mon Oct 01, 2018
Digitale ISSN:
2331-7019
Thema:
Physik
Permalink