Publication Date:
2019-07-13
Description:
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).
Keywords:
Electronics and Electrical Engineering
Type:
GSFC-E-DAA-TN64775
,
GSFC-E-DAA-TN46843
,
International Conference on Silicon Carbide and Related Materials; Sep 17, 2017 - Sep 22, 2017; Washington, DC; United States
Format:
application/pdf
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