Publication Date:
2016-03-31
Description:
Ferroelectric field-effect transistors (FeFET) based on MoS 2 have recently been shown to exhibit considerable potential for use in nano sized non-volatile memory devices. Here, we demonstrated fabrication and characterization of FeFET based on MoS 2 channel with vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer as back-gate insulator. In this device, counterclockwise hysteresis behavior was observed in the drain current–gate voltage curve, which is indicative of interaction between MoS 2 carrier modulation and ferroelectric polarization switching. Furthermore, our VDF-TrFE/MoS 2 FeFET exhibited only n-type behavior, a maximum linear mobility of 625 cm 2 /V s, a large memory window width of 16 V, and a high on/off current ratio of 8 × 10 5 .
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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