Publication Date:
2016-03-05
Description:
Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A 1 (LO)- and E 1 (LO)-phonon-plasmon-coupled modes (LPP – ), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 10 20 cm −3 , the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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