Publication Date:
2015-12-29
Description:
Author(s): Holger Büch, Martin Fuechsle, William Baker, Matthew G. House, and Michelle Y. Simmons Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as … [Phys. Rev. B 92, 235309] Published Mon Dec 28, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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