Publication Date:
2015-05-09
Description:
Author(s): Q. Shi, M. A. Zudov, C. Morrison, and M. Myronov We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3 × 10 4 . The anisotropy oc... [Phys. Rev. B 91, 201301] Published Fri May 08, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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