Publication Date:
2014-09-09
Description:
Author(s): S. Das Sarma, E. H. Hwang, K. Kechedzhi, and L. A. Tracy Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility two-dimensional (2D) Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above th... [Phys. Rev. B 90, 125410] Published Mon Sep 08, 2014
Keywords:
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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