Publication Date:
2014-12-18
Description:
Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1 V is achieved. Of the photons absorbed in the limited spectral range of
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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