Publication Date:
2013-04-23
Description:
Author(s): Raphael Schlesinger, Yong Xu, Oliver T. Hofmann, Stefanie Winkler, Johannes Frisch, Jens Niederhausen, Antje Vollmer, Sylke Blumstengel, Fritz Henneberger, Patrick Rinke, Matthias Scheffler, and Norbert Koch We show that the work function (Φ) of ZnO can be increased by up to 2.8 eV by depositing the molecular electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). On metals, already much smaller Φ increases involve significant charge transfer to F4TCNQ. No indication of negative... [Phys. Rev. B 87, 155311] Published Mon Apr 22, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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