Publikationsdatum:
2011-04-21
Beschreibung:
Author(s): V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel’kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, and S. D. Ganichev We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g^{*} depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded ... [Phys. Rev. B 83, 155313] Published Wed Apr 20, 2011
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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