ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly mismatched group II-Ox–VI1−x alloys have been synthesized by oxygen implantation into Cd1−yMnyTe crystals. In crystals with y〉0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II–VI alloys. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1455689
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