Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
92 (2002), S. 2013-2016
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This article concerns the existence of a double-junction effect in proton-irradiated silicon p+-ν-n+ (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p+-ν-n+ diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1495077
Permalink
|
Location |
Call Number |
Expected |
Availability |