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  • 1
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    Molecular genetic delineation of Phaeocystis species (Prymnesiophyceae) using coding and non-coding regions of nuclear and plastid genomes (2002)
    In:  EPIC3European Journal of Phycology, 37, pp. 77-92
    Details
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Format: application/pdf
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    PAPER (OA)
  • 2
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    First measurement of the branching fraction of the decayψ(2S)→τ+τ− (2002)
    American Physical Society
    Details
    Publication Date: 2002-01-31
    Print ISSN: 0556-2821
    Electronic ISSN: 1089-4918
    Topics: Physics
    Published by American Physical Society
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1446-1449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance and piezoreflectance investigations have been performed on a series of GaNAs layers grown by low-pressure metal-organic chemical vapor deposition on Si-doped GaAs substrate. In addition to the observation of the fundamental band-gap and spin-orbit splitting, the valence-band splitting in thin GaNxAs1−x epilayers strained coherently by the GaAs substrate is observed in these modulation spectra. Comparing photoreflectance with piezoreflectance spectra, we clearly establish the transitions involving the heavy-hole and light-hole bands. We find that the valence-band splitting increases with increasing nitrogen composition, and it decreases with increasing temperature. We point out that the underlying origin of our observation can be attributed to the effect of lattice mismatch between GaNAs film and GaAs substrate. We also find that the deformation potential of GaNxAs1−x does not follow the linear interpolation of those for GaAs and GaN. It shows a strong composition dependence with a bowing in the small composition. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488240
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  • 4
    Electronic Resource
    Electronic Resource
    Ultrafast optical switching properties of single-wall carbon nanotube polymer composites at 1.55 μm (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 975-977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a pump–probe method with a 150 fs laser at the wavelength of 1.55 μm, we have experimentally demonstrated that single-walled carbon nanotubes (SWNT) have an exciton decay time of less than 1 ps and a high third-order polarizability, which is reasonably interpreted as due to their azimuthal symmetry. These experimental results reveal that a SWNT polymer composite may be a candidate material for high-quality subpicosecond all-optical switches. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498007
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 631-633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO//(001)LAO and [100]CCTO//[100]LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490624
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  • 6
    Electronic Resource
    Electronic Resource
    Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 796-798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron effective mass in n-type InNxAs1−x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436524
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  • 7
    Electronic Resource
    Electronic Resource
    Creation and suppression of point defects through a kick-out substitution process of Fe in InP (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2878-2879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The InP defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473695
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  • 8
    Electronic Resource
    Electronic Resource
    Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary alloys (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a firm evidence of enhanced luminescence from InGaN-like clusters in InxAlyGa1−x−yN quaternary alloys. Photoluminescence (PL) and Raman scattering measurements have been employed to study the optical properties of these alloys. The excellent correlation between the phonon replica structures accompanying luminescence line and the observed InGaN-related phonon modes in Raman spectra provide a powerful evidence showing that the existence of InGaN-like clusters is responsible for the enhanced luminescence in InxAlyGa1−x−yN quaternary alloys. In addition, the dependence of the PL emission energy on temperature in the low-temperature regime and on excitation power density can also be explained consistently with recombination mechanisms involving the localized states attributed to InGaN-like cluster size fluctuations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455147
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2496-2498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (SiO2:Er/Si/SiO2:Er) nanometer sandwich structure, in which the thickness of the Si layer between the two SiO2:Er barriers was varied from 1.0 to 4.0 nm with an interval of 0.2 nm, was deposited on both n+-Si and p-Si substrates using the magnetron sputtering technique. Electroluminescence (EL) from the Au/(SiO2:Er/Si/SiO2:Er) nanometer sandwich /n+-Si diodes under reverse biases has been observed. The EL spectrum of each diode can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 μm), 0.806 eV (1.54 μm), and 0.860 eV (1.44 μm), and full widths at half maximum of 0.052 eV, 0.045 eV, and 0.055 eV, respectively. The marked effect of the nanometer Si layer with suitable thickness on enhancing the EL from the Er3+ in the SiO2 layers has been demonstrated. Among the diodes with Si layers having various thicknesses, the intensities of the 1.64-, 1.54-, and 1.44-μm bands of the diode with a 1.6-nm Si layer attain maxima which are 22, 8, and 7 times larger than those of the control diode without any Si layer, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467623
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  • 10
    Electronic Resource
    Electronic Resource
    Depletion interactions in suspensions of spheres and rod–polymers (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 1351-1362 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Liquid-state integral equation methods are employed to study the thermodynamic and structural properties of ideal and repelling rigid rods mixed with hard spheres in the limits when one of the species is dilute. The role of rod aspect ratio and sphere/rod size asymmetry is explored over a wide range of system parameters encompassing the colloid, nanoparticle, and crossover regimes. Novel predictions are found for the polymer (sphere) mediated depletion potentials and second virial coefficients of particles (rods) in dense polymer (sphere) suspensions. The adequacy of the closure approximations employed is tested by comparison with available numerical calculations and more rigorous theories in special limits. The liquid-state theory appears to be accurate for all properties in the nanoparticle regime and for the insertion chemical potential of needles and spherocylinders. However, it significantly underestimates depletion attractions effects in the colloidal regime of short rods and large spheres due to nonlocal entropic repulsion effects between polymers and particles not captured by the classic Percus–Yevick approximation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1485071
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