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  • 1
    Electronic Resource
    Electronic Resource
    Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4636-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356431
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetization dynamics in NiFe thin films induced by short in-plane magnetic field pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7648-7650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization dynamics in a thin NiFe film was investigated by applying short in-plane magnetic field pulses while probing the response using a time-resolved magneto-optical Kerr effect setup. In-plane magnetic field pulses, with duration shorter than the relaxation of the system, were generated using a photoconductive switch and by subsequent propagation of current pulses along a waveguide. The field pulses with typical rise and decay times of 10–60 and 500–700 ps, respectively, have a maximum field strength of 9 Oe, by which Permalloy elements of 16 nm thickness and lateral dimensions of 10×20 μm were excited. The observed coherent precession of a ferromagnetic NiFe system had precession frequencies of several GHz and relaxation times on a nanosecond time scale. The dynamic properties observed agree well the Gilberts's precession equation and the static magnetic properties of the elements © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359462
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2528-2532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors with regard to the resistance changes, namely the tendency to decrease the resistance by annealing at T=200 °C, but to increase the resistance by annealing at T=400 °C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for postprocess tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f regime show significant changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389077
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  • 4
    Electronic Resource
    Electronic Resource
    Hot-hole lasers in III–V semiconductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1692-1697 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384492
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  • 5
    Electronic Resource
    Electronic Resource
    Room temperature electroluminescence from a c-Si p-i-n structure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2310-2313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependent electroluminescence (EL) of c-Si (at 1.1 eV) is investigated at room temperature for a p-i-n structure under excitation with forward biased current pulses. The EL intensity increases by square law at shorter times (〈3 μs) and reaches a steady state value at longer times (〉10 μs). The parabolic dependence of the EL intensity on the current density at the shorter times points to the bimolecular recombination mechanism. The EL response time has been decreased to less than 200 ns for the given p-i-n structure by application of a reverse bias potential. The maximal EL quantum efficiency is of the order of 0.01% for the investigated p-i-n structure and possible ways to increase this value are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390310
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion photovoltage in poly(p -phenylenevinylene) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4410-4412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photovoltage phenomena in poly(p-phenylenevinylene) (PPV) are investigated under pulsed laser illumination. The photovoltage transients are strongly retarded in time depending on sample thickness, laser intensity, and bias illumination. It is shown that the photovoltage in PPV originates from separation of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). The diffusion coefficient of excess holes is found to be on the order of 1×10−6 cm2/s and it increases with increasing excitation intensity and intensity of bias illumination. The diffusion coefficient of excess electrons is about 1–2 orders of magnitude smaller than for excess holes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355721
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure and properties of giant magnetoresistive granular Au80Co20 alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3381-3387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between microstructure and giant magnetoresistance (GMR) of granular Au80Co20 was investigated. Two different processing routes were explored. With the melt spinning technique the microstructure appeared to be so coarse that it was not expected to exhibit any substantial GMR effect. On the other hand, with the procedure of solid-solution annealing and water quenching afterwards, a suitable nanostructure was prepared that showed a GMR of 29% at 10 K and 50 kOe. Subsequent annealing causes coarsening of Co particles. In additional spinodal decomposition occurred for a certain temperature range and a loss of coherency of the Co particles with respect to the Au was observed with high-resolution transmission energy microscopy. At magnetic fields above ∼20 kOe, all annealed alloys showed a saturating magnetization, whereas the resistance is still steadily decreasing, challenging the presumed mathematical relationship between GMR and overall magnetization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325381
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  • 8
    Electronic Resource
    Electronic Resource
    Inverse bremsstrahlung of hot, weakly coupled plasmas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3810-3819 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The free–free absorption coefficient for radiation in hot, weakly coupled plasmas is determined from a systematic approach to the dynamical conductivity. Based on a generalized linear-response theory, it is expressed in terms of determinants of equilibrium correlation functions permitting a perturbative treatment. Within a Gould–DeWitt-type approach, dynamical screening is accounted for by a partial summation of loop diagrams, while strong collisions are treated by a ladder approximation. Known expressions for the absorption coefficient are reproduced when considering certain limits. A comparison is made with simulation results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383025
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  • 9
    Electronic Resource
    Electronic Resource
    Fractal structure of the magnetic field in the laminar zone of the Dynamic Ergodic Divertor of the Torus Experiment for Technology-Oriented Research (TEXTOR-94) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2739-2749 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic field properties at the plasma edge in the Dynamic Ergodic Divertor (DED) for the Torus Experiment for Technology Oriented Research (TEXTOR-94) [Fusion Eng. Des. 37, 337 (1997)] have been studied. This is done by using a generalized symplectic mapping method of integration of field line equations. It is shown that by the radial shift of the resonant magnetic surfaces implemented by change of the plasma current (or the toroidal field) one can strongly vary the plasma edge regimes from the ergodic zone dominated one to the laminar zone dominated regimes in which the field lines with short wall to wall connection lengths are predominant. The embedded in the laminar zone narrow ergodic zones have fractal structures which are investigated in detail. The fractal structures of the magnetic footprints on the divertor plate are also studied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371954
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  • 10
    Electronic Resource
    Electronic Resource
    Lifetime of small polarons in strontium-barium-niobate single crystals doped with cerium or chromium (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5663-5666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small polarons are excited by pulsed illumination (λ=532 nm) of strontium–barium–niobate single crystals doped with 0.66 mol % cerium or with 0.025 mol % chromium. The dark decay of the polarons is observed by monitoring the light-induced absorption at λ=632.8 nm and at λ=785 nm. The relaxation fulfills a stretched-exponential behavior over at least five decades. Using the Arrhenius law the temperature dependence yields the activation energy EA=(0.58±0.02) eV and a frequency factor of Z=(5±3)×1013 s−1. Delayed double-pulse technique (λ=532 nm pulse followed by a λ=1064 nm pulse) reveals a distance dependent recombination rate of the small polarons, i.e., the lifetime of a created polaron is a function of the distance to the next available deep electron trap. In SBN:Cr the R branch can be excited by pulses of λ=1064 nm with energy transfer via an unknown X center. Excitation and recombination show a single-exponential temporal evolution without any significant temperature dependence. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328779
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