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  • American Institute of Physics (AIP)  (26)
  • American Meteorological Society  (4)
  • American Chemical Society (ACS)
  • BioMed Central
  • 2015-2019
  • 2000-2004  (30)
  • 1985-1989
  • 2001  (30)
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Publisher
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  • 2015-2019
  • 2000-2004  (30)
  • 1985-1989
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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of high-oxygen pressure prepared PrBa2Cu3O7−y cuprates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7484-7486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High oxygen pressure annealed PrBa2Cu3O7−y (y∼0) cuprates were prepared in order to study the effect of oxygen stoichiometric parameter y on the unusual Pr/Cu magnetic properties and/or recently reported superconductivity. The oxygen-rich orthorhombic 123-chain phase is highly unstable under high-oxygen pressure synthesis and decomposes completely in 10 bar pressure. For a smaller 2 bar prepared sample a relatively clean phase was preserved with an oxygen parameter y=0.05, as compared with y=0.11 from a conventional 1 bar flowing oxygen method. No superconductivity can be detected for all high-oxygen pressure prepared samples. Instead, Mott-insulator behavior with anomalous high Pr ordering TN(Pr)=19 K was observed for PrBa2Cu3O6.95. Comparison with other Pr/Ba intersubstituted Pr1−xBa2−xCu3O7−y cuprates is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357859
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  • 2
    Electronic Resource
    Electronic Resource
    Non-s-wave behavior of c-axis aligned Pr1.85Ce0.15CuO3.97 superconducting powder (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7660-7662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tetragonal c-axis alignment of Tc=23 K Pr1.85Ce0.15CuO3.97 superconducting powder was achieved in a 1 T alignment field with rotating powder/epoxy holder perpendicular to the alignment field. The in-plane penetration depth λab for this electron-doped superconductor was derived using zero-field-cooled Meissner diamagnetic data with low applied field (Ba〈Hc1ab) parallel to the c-axis aligned powder. A small Pr paramagnetic contribution was subtracted. The temperature dependence of Δλab(T)=λab(T)−λab(0) [with λab(0)∼133 nm] up to ∼0.5 Tc can be fitted well with a non-s-wave or d-wave-like power law Δλab(T)=AT2+CT4, where the T2 law is dominated at low temperature. The present result agrees with recent phase-sensitive experiment, which indicates d-wave nature for these electron-doped 214 cuprates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356052
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of polarization fields on transport properties in AlGaN/GaN heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1783-1789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated transport properties of unintentionally doped n-type AlGaN/GaN heterostructures. Using a thermodynamic model of defect formation, we have modeled the charge transfer process in such heterostructures, obtaining good agreement with experiment. The large polarization fields in the heterostructure dramatically lower the formation energy of the surface defects, leading to the observed extremely large two-dimensional electron gas concentrations. Calculations of the low temperature mobilities were also performed, showing that alloy disorder and, in some cases, interface roughness, are the dominant low-temperature carrier scattering mechanisms. At low temperatures a maximum intrinsic mobility of about 105 cm2/V s is predicted for these heterostructures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339858
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental study of ion heating and acceleration during magnetic reconnection : The 42nd annual meeting of the division of plasma physics of the American Physical Society and the 10th international congress on plasma physics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1916-1928 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion heating and acceleration has been studied in the well-characterized reconnection layer of the Magnetic Reconnection Experiment [M. Yamada et al., Phys. Plasmas 4, 1936 (1997)]. Ion temperature in the layer rises substantially during null-helicity reconnection in which reconnecting field lines are anti-parallel. The plasma outflow is sub-Alfvénic due to a downstream back pressure. An ion energy balance calculation based on the data and including classical viscous heating indicates that ions are heated largely via nonclassical mechanisms. The Ti rise is much smaller during co-helicity reconnection in which field lines reconnect obliquely. This is consistent with a slower reconnection rate and a smaller resistivity enhancement over the Spitzer value. These observations show that nonclassical dissipation mechanisms can play an important role both in heating the ions and in facilitating the reconnection process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356737
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  • 5
    Electronic Resource
    Electronic Resource
    Optical transmission spectroscopy of semi-insulating GaAs substrate implanted by arsenic ions at different dosages (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6536-6538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The near infrared optical properties of arsenic ion-implanted GaAs (GaAs:As+) with different dosages are investigated using Fourier transform infrared spectroscopy. The band edge absorption coefficient and the band gap energy of GaAs: As+ increases from 6.2×103 to 2.2×104 cm−1 and redshift (shrink) from 1.40 to 1.36 eV as the dosage increases from 1013 to 1016 ions/cm2, respectively. Particularly, the reciprocal slope of absorption edge and the correlated defect concentration of the GaAs:As+ are determined for the first time to change from 6 to 23 meV and from 〈1017 cm−3 to 2–5×1019 cm−3, respectively. The category and origin of the damage-induced defects with their activation energies leveled at between 0.6 and 1.15 eV are identified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370088
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  • 6
    Electronic Resource
    Electronic Resource
    Mathematical analysis of soft baking in photolithography (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1861-1865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The soft baking step of a photolithography process is analyzed theoretically, taking the effect of the temperature dependence of the diffusivity of solvent into account. A coordinates-transform technique is chosen to solve the moving boundary problem under consideration. The temporal variation of the thickness of a film is predicted, and the result obtained justified by fitting experimental data reported in the literature for both poly(methylmethacrylate) film and Shipley UVIII photoresist. We show that, depending upon the types of photoresist film and the operating conditions, the transport of solvent may be controlled by the diffusion of solvent in a film or the convective transport of solvent from the gas–film interface to the bulk gas phase. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335823
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  • 7
    Electronic Resource
    Electronic Resource
    High frequency high field permeability of patterned Ni80Fe20 and Ni45Fe55 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6808-6810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High frequency high field permeability of patterned Ni80Fe20 and Ni45Fe55 thin films was measured from lithographically defined toroids. Measurement frequency is up to 500 MHz and excitation field up to 5 Oe. Permeability rolloff is calculated from the inductance data. In this experiment, patterned widths range from 30 down to 0.5 μm. Our data suggest that the rotational permeability measured at low field excitation is sufficient to predict high frequency characteristics. The rotational permeability decreases with decreasing patterned width. The 0.5 μm wide permalloy device has μ of 80 and the Ni45Fe55 50. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362643
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of Ag underlayers on the microstructure and magnetic properties of epitaxial FePt thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7068-7070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work Ag underlayers, with a slightly larger unit cell than FePt, were found not only to induce epitaxial growth of the FePt films but also to reduce the FePt ordering temperature. Without using the Ag underlayer, the FePt film deposited onto the Si substrate was fcc disordered. By the use of the Ag underlayer, it was observed that the FePt unit cells were expanded in the film plane. This has caused the shrinkage of the FePt unit cells along the film normal direction and resulted in the in situ ordering of the FePt thin film at reduced temperatures. The microstructural and magnetic properties of the FePt/Ag films at varied substrate temperature and FePt thickness were studied to investigate the L10 FePt ordering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360683
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  • 9
    Electronic Resource
    Electronic Resource
    Phase transition and acoustic localization in arrays of air bubbles in water (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1724-1726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wave localization is a ubiquitous phenomenon. It refers to situations that transmitted waves in scattering media are trapped in space and remain confined in the vicinity of the initial site until dissipated. Here, we report a phase transition from acoustically extended to localized states in arrays of identical air-filled bubbles in water. It is shown that the acoustic localization in such media is coincident with the complete band gap of a corresponding lattice arrangement of the air bubbles. When the localization or the band gap occurs, a collective behavior of the bubbles appears, a unique feature differentiating the localization effect from the residual absorption effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403659
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3980-3982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379789
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