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  • American Institute of Physics (AIP)  (4)
  • 2000-2004  (4)
  • 2000  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Dwell-time related effects in focused ion beam synthesis of cobalt disilicide (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 57-62 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the high current density of a focused ion beam on the ion beam synthesis of CoSi2 layers has been investigated. After 35 keV Co+ or 70 keV Co2+ implantation into a heated Si(111) substrate and subsequent annealing, the layers have been investigated by scanning electron microscopy and Rutherford backscattering spectroscopy (RBS). It is shown that the mode of beam scanning influences the CoSi2 layer formation significantly. At a given substrate temperature, a sufficient low dwell time is required to obtain a continuous layer rather than a laterally disrupted structure. With increasing target temperature, the dwell-time window becomes less restricted. The results are discussed in terms of damaging and dynamic annealing of the silicon crystal. RBS channeling investigations demonstrate that continuous or disrupted CoSi2 layers are formed when the substrate remains crystalline or becomes amorphous, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371826
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126070
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  • 3
    Electronic Resource
    Electronic Resource
    Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the molecular-beam epitaxy growth, as well as both the structural and optical characterization of a set of InAs/GaSb type-II strained-layer superlattice samples, in which the GaSb layer thickness is systematically increased. Absorbance spectroscopy measurements show well-defined features associated with transitions from the various valence subbands to the lowest conduction subband, and also a significant blueshift of the band edge when the GaSb layers thickness is increased. Empirical pseudopotential method calculations are shown to successfully predict the blueshift and help identify the higher-energy transitions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125770
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  • 4
    Electronic Resource
    Electronic Resource
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126294
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