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  • Articles  (4)
  • American Institute of Physics (AIP)  (4)
  • International Union of Crystallography
  • Wiley
  • 2000-2004  (4)
  • 2000  (4)
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  • Articles  (4)
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  • 2000-2004  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6272-6275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs–GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer–Weber-like QD arrangement. We demonstrate an injection laser based on this kind of QDs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321795
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of radiation-induced defects on silicon solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3941-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments indicated an anomalous degradation of n+–p–p+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels Ec−0.17, Ec−0.1, Ec−0.43, and Ev+0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level Ec−0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290453
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of excitons on CdTe solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8786-8792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥1015 cm−3. From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373611
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanism for the anomalous degradation of silicon space solar cells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a mechanism to explain the anomalous degradation of n+-p-p+ silicon space solar cells. Distinct from previously known mechanisms, it has been shown that the anomalous increase and abrupt decrease of short-circuit current are caused by corresponding changes of the minority carrier lifetime and a conversion of conductivity type. The majority carrier density decreases abruptly due to trapping by the radiation-induced deep donors, which results in an increase of carrier lifetime and resistance, conversion of conductivity type, and anomalous change of solar cell performance. Peak values of the carrier lifetime and short-circuit current decrease with increasing illumination intensity and are sensitive to variations of the weak optical illumination. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126445
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