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  • American Chemical Society  (36)
  • Springer  (20)
  • Institute of Physics  (7)
  • American Institute of Physics (AIP)  (6)
  • Oxford University Press  (4)
  • American Chemical Society (ACS)
  • Emerald
  • 2000-2004  (74)
  • 1975-1979
  • 1955-1959
  • 1950-1954
  • 2000  (74)
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  • 2000-2004  (74)
  • 1975-1979
  • 1955-1959
  • 1950-1954
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  • 1
    Electronic Resource
    Electronic Resource
    Detailed comparison of simulated and measured plasma profiles in the scrape-off layer and edge plasma of DIII-D (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3663-3680 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of detailed comparisons between experimental measurements of the scrape-off layer and divertor plasmas and simulations using the UEDGE code for a DIII-D discharge [J. Luxon et al., Proceedings of the 11th International Conference on Plasma Physics and Controlled Nuclear Fusion (International Atomic Energy Agency, Vienna, 1986), Vol. I, p. 159] are reported. The simulations focus on understanding the flow of both fuel and impurity particles throughout the edge and scrape-off layer (SOL) plasma. The core impurity content and the core hydrogen ionization rate can be explained by sputtering and recycling in the divertor region alone. The model reproduces most of the detailed experimental measurements. The simulations include the effect of intrinsic impurities, assumed to be carbon originating from sputtering of the plasma facing surfaces. The simulations accurately reproduce the total radiated power, although the spatial profile of radiation is somewhat narrower in the simulation. The measured carbon density on closed field lines is reproduced well with the simulation. Comparison of carbon emission lines indicates the total carbon sputtering yield is a factor of 2 to 4 less than expected, although the total radiated power and core carbon content are insensitive to the sputtering yield. The agreement between simulation and experiment permits more meaningful interpretation of the experimental measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286509
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum chaos for the radially vibrating spherical billiard (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 10 (2000), S. 366-370 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spherical quantum billiard with a time-varying radius, a(t), is considered. It is proved that only superposition states with components of common rotational symmetry give rise to chaos. Examples of both nonchaotic and chaotic states are described. In both cases, a Hamiltonian is derived in which a and P are canonical coordinate and momentum, respectively. For the chaotic case, working in Bloch variables (x,y,z), equations describing the motion are derived. A potential function is introduced which gives bounded motion of a(t). Poincaré maps of (a,P) at x=0 and the Bloch sphere projected onto the (x,y) plane at P=0 both reveal chaotic characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.166503
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of diagnostic hole-closure in Z-pinch driven hohlraums (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 681-688 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we investigate the partial closure of diagnostic holes in Z-pinch driven hohlraums. These hohlraums differ from current laser-driven hohlraums in a number of ways such as their larger size, greater x-ray drive energy, and lower temperature. Although the diameter of the diagnostic holes on these Z-pinch driven hohlraums can be much greater than their laser-driven counterparts, 4 mm in diameter or larger, radiation impinges on the wall material surrounding the hole for the duration of the Z pinch, nearly 100 ns. This incident radiation causes plasma to ablate from the hohlraum walls surrounding the diagnostic hole and partially obscure this diagnostic hole. This partial obscuration reduces the effective area over which diagnostics view the hohlraum's radiation. This reduction in area can lead to an underestimation of the wall temperature when nonimaging diagnostics such as x-ray diodes and bolometers are used to determine power and later to infer a wall temperature. In this article we describe the techniques used to characterize the hole-closure in these hohlraums and present the experimental measurements of this process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873852
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  • 4
    Electronic Resource
    Electronic Resource
    Behavior of μMAG standard problem No. 2 in the small particle limit (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5520-5522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For a uniformly magnetized rectangular particle with dimensions in the ratio 5 : 1 : 0.1, the coercive and switching fields in the (1,1,1) direction are determined to be Hc/Ms=0.057069478 and Hs/Ms=0.057142805. Previous micromagnetic computations of coercive and switching fields that did not approach these values for small particles are analyzed. It is shown that the disagreement was primarily due to a disparity in the method of calculating demagnetization energy. Corrected simulations are shown to agree with analytically determined values. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373391
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001) surface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2491-2493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Å, as evidenced by the x-ray diffraction full width at half maximum of 90 arc sec and 4.2 K donor-bound exciton peak width of 1.4 meV. The epilayers exhibit clear signatures of compressive strain, suggesting a more favorable growth mode than can be achieved on the Si-terminated surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318723
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  • 6
    Electronic Resource
    Electronic Resource
    High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2186-2188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High carbon concentrations at distinct regions at thermally-grown SiO2/6H–SiC(0001) interfaces have been detected by electron energy loss spectroscopy (EELS). The thickness of these C-rich regions is estimated to be 10–15 Å. The oxides were grown on n-type 6H–SiC at 1100 °C in a wet O2 ambient for 4 h immediately after cleaning the substrates with the complete RCA process. In contrast, C-rich regions were not detected from EELS analyses of thermally grown SiO2/Si interfaces nor of chemical vapor deposition deposited SiO2/SiC interfaces. Silicon-rich layers within the SiC substrate adjacent to the thermally grown SiO2/SiC interface were also evident. The interface state density Dit in metal–oxide–SiC diodes (with thermally grown SiO2) was approximately 9×1011 cm−2 eV−1 at E−Ev=2.0 eV, which compares well with reported values for SiC metal–oxide–semiconductor (MOS) diodes that have not received a postoxidation anneal. The C-rich regions and the change in SiC stoichiometry may be associated with the higher than desirable Dit's and the low channel mobilities in SiC-based MOS field effect transistors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314293
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  • 7
    Electronic Resource
    Electronic Resource
    Building business success: a case study of small business coaching (2000)
    Bingley : Emerald
    Industrial and commercial training 32 (2000), S. 241-244 
    Details
    ISSN: 0019-7858
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: This article describes a project and the resulting programme to help small businesses to survive and grow through the use of business coaching. It also describes the use of the programme in an actual case study of business coaching. The programme seeks to give the owner/managers of small businesses expert, practical and cost-effective guidance on strategic and business planning. It is designed to be flexible to allow users to draw their own conclusions and make their own decisions. It emphasises the importance of the part people play in business success and of including employees in business decisions. The article highlights potential further developments to the programme described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/00197850010379785
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  • 8
    Electronic Resource
    Electronic Resource
    Bioinformatics in the community college (2000)
    Springer
    Journal of industrial microbiology and biotechnology 24 (2000), S. 314-318 
    Details
    ISSN: 1476-5535
    Keywords: Keywords: bioinformatics; biotechnology; computers; DNA sequence analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Biotechnology is becoming an information-based field. In this article we describe some resources available to instructors, show how these resources are used in the biotechnology training program, and provide examples of activities used by non-science majors to increase their understanding of biology. We discuss some of the challenges we have encountered using these tools in the classroom. Journal of Industrial Microbiology & Biotechnology (2000) 24, 314–318.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/sj.jim.2900779
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  • 9
    Electronic Resource
    Electronic Resource
    Spectroscopy on Small Telescopes: The Echelle Spectrograph (2000)
    Springer
    Astrophysics and space science 273 (2000), S. 217-224 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In recent years there has been a trend toward the automation ofmodest sized observatories, especially those involved withphotoelectric photometry. Although undoubtedly useful, there isclearly a need for more advanced instrumentation such asspectrographs. The relatively small telescope sizes places severelimits on the choice of spectrograph configuration. A fiber-fedechelle spectrograph is arguably the most suitable design forthese applications.Presented here is a brief discussion of the design philosophy andoperating principles. Both theoretical and measured performancedata for the prototype University of Queensland EchelleSpectrograph are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1002737017056
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  • 10
    Electronic Resource
    Electronic Resource
    Integral operators of Sturm-Liouville type (2000)
    Springer
    Integral equations and operator theory 38 (2000), S. 51-65 
    Details
    ISSN: 1420-8989
    Keywords: Primary 45A05 ; 45H05 ; Secondary 45L05
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract This paper extends the class of integral equations whose solutions can be generated from a finite number of particular cases to include those of Sturm-Liouville type, including the case where the associated operators are not self-adjoint. An explicit expression for the resolvent operator is generated from two particular solutions, in a form amenable to the use of approximation techniques. A usable estimate of the norm of the inverse operator is obtained even in cases where approximate solutions have to be used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01192301
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