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  • American Institute of Physics (AIP)  (5)
  • American Physical Society  (2)
  • 2000-2004  (7)
  • 1995-1999
  • 2000  (7)
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  • 2000-2004  (7)
  • 1995-1999
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1380-1388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin tungsten nitride (WNx) films were produced by reactive dc magnetron sputtering of tungsten in an Ar–N2 gas mixture. The effects of the variation of nitrogen partial pressure on the composition, residual stress, and structural properties of these films as well as the influence of postdeposition annealing have been studied. The films were analyzed in situ by a cantilever beam technique, and ex situ by x-ray photoelectron spectroscopy, electron energy-loss spectroscopy, x-ray diffraction, and transmission electron microscopy (TEM). It was found that at N concentrations below 8 at. %, the films (typical 150 nm in thickness) were essentially bcc α-W. An amorphous phase was observed in the range of about 12–28 at. % N. When N concentrations reached ∼32 at. % or above, a single-phase structure of W2N was formed. Annealing of the as-deposited films resulted in crystallization of the amorphous or an improved crystallinity of the W2N structure, which was related to the N concentration. Stresses of all W and WNx films were compressive. As the N concentration was increased, the stress decreased and reached its lowest value for amorphous samples near 20 at. % N. Past this point, the compression of films rose again. These results can be ascribed to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. Cross-sectional TEM studies showed that all crystalline WNx films had columnar microstructures. The average column width near stoichiometry of W2N was ∼20±5 nm near the film surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4039-4041 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In modeling electromigration failure, it is common to employ the concept of a critical stress at which interconnect failure occurs. In this report, we illustrate that the atomic flux divergence, obtained directly from the one-dimensional stress-based modeling, is more appropriate in characterizing the formation of void in electromigration. A numerical analysis was carried out, to model the evolution of stress, atomic flux, and flux divergence in an aluminum line containing a fast-diffusion segment. The maximum flux divergence, not the maximum tensile stress, predicts the voiding location which is consistent with microscopic observations in the experiments of Joo et al. [Acta. Mater. 46, 1969 (1998); J. Appl. Phys. 85, 2108 (1999)] utilizing nanoindented single-crystal aluminum lines. This is because the flux divergence directly reflects the extent of matter depletion, and thus the propensity of voiding. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 177-187 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual stress and structural properties of tungsten thin films prepared by magnetron sputtering as a function of sputtering-gas pressure are reported. The films were analyzed in situ by a cantilever beam technique, and ex situ by x-ray diffraction, cross-sectional transmission electron microscopy (TEM), x-ray photoelectron spectroscopy, electron energy-loss spectrometry, and energy-filtered electron diffraction. It is found that the residual stress, microstructure, and surface morphology are clearly correlated. The film stresses, determined in real time during the film formation, depend strongly on the argon pressure and change from highly compressive to highly tensile in a relatively narrow pressure range of 12–26 mTorr. For pressures exceeding ∼60 mTorr, the stress in the film is nearly zero. It is also found that the nonequilibrium A15 W structure is responsible for the observed tensile stress, whereas the stable bcc W or a mixture of bcc W and A15 W are in compression. Cross-sectional TEM evidence indicates that the compressively stressed films contain a dense microstructure without any columns, while the films having tensile stress have a very columnar microstructure. High sputtering-gas pressure conditions yield dendritic-like film growth, resulting in complete relaxation of the residual tensile stresses. Structural details of the A15 W and amorphous W phases were also investigated at the atomic level using energy-filtered electron diffraction with reduced radial distribution function G(r) analysis. By comparing the experimental and simulated G(r) distributions, the A15 W structure is determined to be composed of ordered and stacking faulted W3W structures and the amorphous W has a disordered structure of W3O. The effect of oxygen in stabilizing the A15 phase found is explained on the basis of structural and thermodynamic stability. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5293-5295 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties R(Fe1−xCox)11.3Nb0.7 compounds have been investigated. All of the compounds crystallize in the tetragonal ThMn12 structure. The unit cell volume slightly decreases with increasing Co content for both systems. Curie temperature (TC) almost increases linearly with increasing Co content for both systems. The maximum of saturation magnetization (Ms) appears around x=0.2 in Ho(Fe1−xCox)11.3Nb0.7 and x=0.15 in Y(Fe1−xCox)11.3Nb0.7 compounds at 5 K. The easy magnetization directions of all compounds are along the crystallographic c axis at room temperature. Thermomagnetic analysis shows that there exists no spin reorientation in the whole ordering temperature range. The magnetocrystalline anisotropy field Ba of Y(Fe1−xCox)11.3Nb0.7 exhibits a maximum with x=0.10 at 5 K and x=0.05 at room temperature, while Ba of Ho(Fe1−xCox)11.3Nb0.7 decreases monotonically with the increasing Co content at room temperature. First-order magnetization process (FOMP) has been observed in Ho(Fe1−xCox)11.3 compounds at low temperature. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 8827-8832 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Sum-frequency generation (SFG) vibrational spectroscopy was used to study how side alkyl chains of a polyimide are oriented at the air–polymer interface and how they are affected by mechanical rubbing and adsorption of a liquid crystal monolayer. The spectra of polyimides with various alkyl chain lengths all indicate that the chains protrude out of the polyimide surface with a very broad distribution. Longer alkyl chains appear to contain more gauche defects. While the polyimide backbones are aligned by rubbing, the side chain orientation is hardly affected. Adsorption of a liquid crystal monolayer on the surface significantly reduces the gauche defects in the alkyl chains. © 2000 American Institute of Physics.
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  • 6
    Publication Date: 2000-11-20
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
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  • 7
    Publication Date: 2000-10-01
    Print ISSN: 1063-651X
    Electronic ISSN: 1095-3787
    Topics: Physics
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