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  • 2020-2022
  • 2000-2004  (213)
  • 1970-1974
  • 2000  (213)
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  • 2020-2022
  • 2000-2004  (213)
  • 1970-1974
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  • 1
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    High-gain harmonic-generation free-electron laser (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-08-11
    Description: A high-gain harmonic-generation free-electron laser is demonstrated. Our approach uses a laser-seeded free-electron laser to produce amplified, longitudinally coherent, Fourier transform-limited output at a harmonic of the seed laser. A seed carbon dioxide laser at a wavelength of 10.6 micrometers produced saturated, amplified free-electron laser output at the second-harmonic wavelength, 5.3 micrometers. The experiment verifies the theoretical foundation for the technique and prepares the way for the application of this technique in the vacuum ultraviolet region of the spectrum, with the ultimate goal of extending the approach to provide an intense, highly coherent source of hard x-rays.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Yu -- Babzien -- Ben-Zvi I -- DiMauro -- Doyuran -- Graves -- Johnson -- Krinsky -- Malone -- Pogorelsky I -- Skaritka -- Rakowsky -- Solomon -- Wang -- Woodle -- Yakimenko V -- Biedron -- Galayda -- Gluskin -- Jagger -- Sajaev V -- Vasserman I -- New York, N.Y. -- Science. 2000 Aug 11;289(5481):932-5.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Brookhaven National Laboratory, Upton, NY 11973, USA. Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10937992" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Serotonin and the therapeutic effects of ritalin (2000)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2000-04-15
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Volkow, N D -- Gatley, S J -- Fowler, J S -- Wang, G J -- Swanson, J -- New York, N.Y. -- Science. 2000 Apr 7;288(5463):11.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Medical Department, Brookhaven National Laboratory, Upton, NY 11973-5000, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10766624" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Attention Deficit Disorder with Hyperactivity/*drug therapy ; Brain/metabolism ; Carrier Proteins/genetics/metabolism/physiology ; Central Nervous System Stimulants/*pharmacology/therapeutic use ; Dopamine/physiology ; Dopamine Plasma Membrane Transport Proteins ; Humans ; Membrane Glycoproteins/metabolism ; *Membrane Transport Proteins ; Methylphenidate/*pharmacology/therapeutic use ; Mice ; Mice, Knockout ; Motor Activity/*drug effects ; *Nerve Tissue Proteins ; Serotonin/*metabolism ; Serotonin Plasma Membrane Transport Proteins
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373500
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  • 4
    Electronic Resource
    Electronic Resource
    Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372004
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1369-1373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance–voltage data but from resistance–capacitance time constant effect observed in capacitance–frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372022
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  • 6
    Electronic Resource
    Electronic Resource
    Phase formation and magnetic properties of Nd3(Fe,Co,Ti)29 compounds (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5272-5274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3(Fe,Ti)29−xCox compounds with Nd3(Fe,Ti)29-type structure have been synthesized with x=0, 1.61, 3.22, 4.83, and 6.44. The easy magnetization directions of all these compounds are found to be in the basal plane. The Curie temperature increases strongly with increasing Co content. Substitution of Co for Fe leads to a monotonic increase of the saturation magnetization. The spin reorientation transitions are found for all of these compounds, and the spin-reorientation temperature decreases with increasing Co content. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373318
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3027-3029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier distribution and defects have been investigated in InAs/GaAs quantum dots by cross-sectional transmission electron microscopy (XTEM), capacitance–voltage, and deep level transient spectroscopy. Carrier confinement is found for 1.1- and 2.3-monolayer-(ML)-thick InAs samples. For 2.3 ML sample, XTEM images show the presence of defect-free self-assembled quantum dots. With further increase of the InAs thickness to 3.4 ML, significant carrier depletion caused by the relaxation is observed. In contrast to 1.1 and 2.3 ML samples in which no traps are detected, two broad traps and three discrete traps at 0.54, 0.40, and 0.34 eV are observed in 3.4 ML sample. The traps at 0.54 and 0.34 eV are found to be similar to the traps observed in relaxed In0.2Ga0.8As/GaAs single quantum well structures. By comparing with the XTEM images, the trap at 0.54 eV is identified to be the relaxation-induced dislocation trap in the GaAs layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323735
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs quantum dots grown on GaAs surface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2837-2839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320854
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  • 9
    Electronic Resource
    Electronic Resource
    Annealing dynamics of nitrogen-implanted GaAs films investigated by current–voltage and deep-level transient spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2283-2285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present electrical data to show that, after nitrogen implantation, GaAs films become resistive after high-temperature annealing. The activation energies of the resistance are determined to be 0.34, 0.59, and 0.71 eV after annealing at 500, 700, and 950 °C, respectively. The increase in the activation energy with increasing annealing temperature can be explained by the results of traps detected in deep-level transient spectroscopy, where two traps at 0.32 and 0.70 eV are observed in the samples after annealing. The intensity of the trap at 0.32 eV is found to reduce by annealing. By comparing to the result of the x-ray diffraction, we suspect that this trap is related to the lattice-expansion defects. The trap at 0.70 eV is observed only in samples annealed at high temperatures. Since this trap contributes to the high-resistive effect, we believe that it is associated with the nitrogen ions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126322
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  • 10
    Electronic Resource
    Electronic Resource
    Asymmetry of coercivity dependence on temperature in exchange-biased FeMn/Co bilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2731-2733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the coercivity in biased FeMn/Co bilayers is investigated. An asymmetric behavior of the left and right coercivity with varying temperature is observed. The asymmetry can be understood by taking into account the variation of the spin arrangements in the antiferromagnetic layer. The calculated results are in agreement with the experimental ones qualitatively. All these results suggest that the magnetization reversal mechanisms are different for increasing and decreasing fields. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319511
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