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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
  • 1975-1979
  • 1999  (2)
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Publisher
Years
  • 1995-1999  (2)
  • 1975-1979
Year
  • 1
    Electronic Resource
    Electronic Resource
    Determination of elastic constants in thin films using hydrogen loading (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By measuring stress and strain that build up in thin films during hydrogen absorption, the elastic constants of the films can be determined, if a one-dimensional elastic behavior occurs only. This will be demonstrated for hydrogen absorption in Nb films. The in-plane stress is determined from the substrate curvature that is measured by using a two-beam laser setup. The out-of-plane strain is measured via x-ray diffraction. Furthermore, this method allows us to distinguish whether the film is plastically or elastically deformed by checking the reversibility of the stress–strain curve. In the case of a 250-nm-thick Nb film, the elastic constants obtained are similar to that of bulk Nb. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123028
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  • 2
    Electronic Resource
    Electronic Resource
    Resputtering during the growth of pulsed-laser-deposited metallic films in vacuum and in an ambient gas (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3766-3768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To determine the effective sputter yield during pulsed-laser deposition a method by measuring the deposition rate on tilted substrates is proposed. Under vacuum conditions, sputter yields of up to 0.17 and 0.55 were found at a laser fluence of 4.5 J/cm2 for Fe and Ag, respectively. These strong resputtering effects are induced by the large fraction of energetic ions occurring during deposition. With decreasing laser fluence or increasing Ar gas pressure, the sputter yields are reduced due to a decrease of the kinetic energy of the ions. For the deposition of stoichiometric films, an optimum Ar partial pressure of about 0.04 mbar exists, where the deposition rate is highest and the sputter yield is reduced. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125449
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    Paper (German National Licenses)
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