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  • American Institute of Physics (AIP)  (7)
  • 1995-1999  (7)
  • 1980-1984
  • 1930-1934
  • 1920-1924
  • 1999  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Magnetization reversal process in polycrystalline ordered Fe–Pt(001) thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4301-4303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization reversal processes in Fe–Pt(001) thin films prepared by a high-pressure sputter deposition method were studied. Samples were classified in four types of domain patterns. Type I, with maze-like domain patterns, has a mixing mode of nucleation and wall motion for magnetization reversal. While, type II, with large island domain patterns, shows wall motion in its magnetization reversal. Type III has small island domain patterns, and type IV has fine discrete domain patterns showing rotational modes with inclined M–H loops. Type IV is expected to be one of the candidates for future ultrahigh-density magnetic recording media with high resolution and low noise. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370349
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3573-3575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-order layer-by-layer etching of silicon nitride has been investigated using an ultraclean electron-cyclotron-resonance plasma. The surface nitrogen atoms in silicon nitride within only about one atomic layer from the surface were found to be removed selectively by excited hydrogen gas under well-controlled conditions. The remaining outermost silicon atoms were removed selectively by irradiation of a low-energy Ar+ and H+ ion mixture. By repeating these role-share cycles alternately, the resultant etching amount per cycle corresponded to one mean atomic layer of silicon nitride. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124165
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  • 3
    Electronic Resource
    Electronic Resource
    Phase transition of an S=1 quasi-one-dimensional Heisenberg antiferromagnet in applied magnetic fields (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6076-6078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transition of the S=1 quasi-one-dimensional Heisenberg antiferromagnet Ni(C5H14N2)2N3(PF6) in an applied magnetic field (H) is studied from the measurement of the heat capacity (Cp). There is no anomaly in Cp below H=4 T (H parallel to the chain) or H=6 T (H perpendicular to the chain). A sharp anomaly in Cp is observed above H=4 T (H parallel to the chain) or H=6 T (H perpendicular to the chain) indicating the occurrence of long-range ordering. The H dependence of the critical temperature is studied and a temperature versus magnetic field phase diagram is constructed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369087
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  • 4
    Electronic Resource
    Electronic Resource
    Assignment of the Raman active vibration modes of β-Si3N4 using micro-Raman scattering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7380-7384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational modes of the β-Si3N4 Raman active bands appearing in the wave number region between 110 and 1100 cm−1 were determined by the polarization and the crystallographic orientation dependence of the Raman intensities of the bands using micro-Raman spectroscopy. The laser beam was focused onto a single grain with the shape of a regular hexagon or elongated hexagon on the sintered ceramic plate. The three intense bands appearing at about 185, 208, and 230 cm−1 were attributed to the vibrational modes of E2g, Ag, and E1g, respectively. The remaining peaks were also assigned to the irreducible representations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369366
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  • 5
    Electronic Resource
    Electronic Resource
    Study on recording beyond 10 Gbit/in.2 with Co–Cr based perpendicular recording media (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6130-6132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recording of beyond 10 Gbit/in.2 was studied with Co–Cr based perpendicular recording media and ring heads. A simple recording simulation based on an M–H loop sheared by the demagnetizing field in the film suggested that a steeper M–H loop slope in the medium results in a higher output and resolution. It was found that recording with a metal in gap head with a gap length of as small as 0.15 μm on a Co–Cr20–Nb4–Pt5 medium with an M–H loop slope of 1.5/4π emu/Oe cm3 exhibited a high output and a high resolution. The obtained high signal-to-noise ratio and resolution suggested a possibility of recording beyond 10 Gbit/in.2 for a track pitch of 0.4 μm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370020
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  • 6
    Electronic Resource
    Electronic Resource
    Hot-electron transport through Au/CaF2/Si(111) structure studied by ballistic electron emission spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 941-946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of calcium fluoride (CaF2) [about two monolayers (ML)] in Au/CaF2/Si(111) heterostructure on hot-electron transport across the CaF2 intralayers has been studied using ballistic electron emission microscopy (BEEM) and Fourier transform infrared spectroscopy (FTIR). The BEEM current–voltage spectra show that the electron transport property is strongly affected by the CaF2 intralayers. The threshold voltage V0 for the onset of the BEEM current for an insulating CaF2 intralayer, which is about 3.6 V, is obtained only for the sample in which CaF2 was deposited at 700 °C. In contrast, the threshold voltage of the sample in which CaF2 was deposited at 550 °C is determined to be about 0.74 V. The FTIR spectra of these CaF2 layers show that Ca–Si–F bonds exist in the latter, but not in the former. The existence of Ca–Si–F bonds implies that the CaF2 heteroepitaxial growth at 550 °C is unsuccessful in obtaining a high-quality CaF2 layer and will induce many defects in the CaF2 layer and/or at the interface. The defect-induced states in the CaF2 intralayers allow hot electrons to travel through the intralayers even below 3.6 eV and lie in a position of the threshold voltage for the onset of the BEEM current to be about 0.74 V. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369214
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  • 7
    Electronic Resource
    Electronic Resource
    Remanent magnetization structures in single-layer perpendicular thin film media (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6136-6138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical magnetic force microscopy has been applied to investigate the relationship between the remanent magnetization and the film microstructure for various types of CoCr-alloy single-layer perpendicular media. The minimum size of irregular magnetic domain in CoCr and CoCrTa media is found to be an unit crystal grain, while that of CoCrPt media includes at least four magnetic crystal grains. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370021
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