Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 3931-3933
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The crystallinity of a phosphorus-doped n-type diamond thin film as grown on a C(001) substrate by gas source molecular beam epitaxy has been examined by x-ray photoelectron diffraction (XPD) and atomic force microscopy (AFM). AFM showed that the growth mode of the n-type film is not an island-growth type that hinders the application of XPD. C 1s XPD patterns for the n-type film and the substrate showed almost perfect similarity. This proves that, like the substrate, the phosphorus-doped n-type thin film is in a good diamond structure. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369769
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