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  • American Institute of Physics (AIP)  (6)
  • EMBO Press  (1)
  • American Geophysical Union (AGU)
  • American Meteorological Society (AMS)
  • 2000-2004  (4)
  • 1995-1999  (3)
  • 1990-1994
  • 2001  (4)
  • 1999  (3)
Collection
Publisher
Years
  • 2000-2004  (4)
  • 1995-1999  (3)
  • 1990-1994
Year
  • 1
    Electronic Resource
    Electronic Resource
    Decomposition and nanocrystallization in reactively sputtered amorphous Ta–Si–N thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1986-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering (ASAXS) and x-ray diffraction (XRD). Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between 800 and 1000 °C are observed and the results of the different techniques are compared. From a Fourier analysis of ASAXS intensities the nanostructure of the investigated ternary system is derived using a model of hard spheres according to Guinier and Fournet. ASAXS investigations indicate that the noncrystalline samples can be described by a monophase fit and the crystallized samples by a bimodal-phase fit, the latter results being consistent with XRD which identifies TaN and Ta5Si3 phases. Detailed analysis shows that TaN nanograins of approximately 2 nm size develop after a decomposition process. Larger grains of Ta5Si3 are observed in addition to the TaN grains if annealing is performed at temperatures higher than 950 °C. The aim of these investigations is to give a generally applicable explanation of the barrier failure mechanism for Ta–Si–N diffusion barriers, which is actually observed at temperatures below the crystallization temperature if the films are used in contact with Cu or Al. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388173
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  • 2
    Electronic Resource
    Electronic Resource
    The osp(1,2)-covariant Lagrangian quantization of reducible massive gauge theories (1999)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 40 (1999), S. 6189-6208 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The osp(1,2)-covariant Lagrangian quantization of irreducible gauge theories is generalized to L-stage reducible theories. The dependence of the generating functional of Green's functions on the choice of gauge in the massive case is discussed and Ward identities related to osp(1,2) symmetry are given. Massive first-stage theories with closed gauge algebra are studied in detail. The generalization of the Chapline–Manton model and topological Yang–Mills theory to the case of massive fields are considered as examples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.533086
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  • 3
    Electronic Resource
    Electronic Resource
    The osp(1,2)-covariant Lagrangian quantization of irreducible massive gauge theories (1999)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 40 (1999), S. 674-698 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The osp(1,2)-covariant Lagrangian quantization of general gauge theories is formulated which applies also to massive fields. The formalism generalizes the Sp(2)-covariant Batalin–Lavrov–Tyutin (BLT) approach and guarantees symplectic invariance of the quantized action. The dependence of the generating functional of Green's functions on the choice of gauge in the massive case disappears in the limit m→0. Ward identities related to osp(1,2) symmetry are derived. Massive gauge theories with closed algebra are studied as an example. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.532681
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2401-2403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125027
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  • 5
    Electronic Resource
    Electronic Resource
    Electrode modification by electron-induced patterning of aromatic self-assembled monolayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3323-3325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled monolayers of ω-(4′-methyl-biphenyl-4-yl)-dodecyl thiol [CH3–C6H4-C6H4–(CH2)12–SH,BP12] on gold were patterned via exposure to 300 eV electrons. Subsequent copper deposition in an electrochemical cell revealed behavior opposite to that of electron beam patterned monolayers of alkanethiols. Whereas alkanethiols act as a positive resist and lead to copper deposition only on irradiated parts, the biphenyl based thiol acts as a negative resist. At the irradiated areas the layer exhibits blocking behavior and copper deposition is observed only on the nonirradiated parts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415771
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  • 6
    Electronic Resource
    Electronic Resource
    Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nanocrystallization process in thin amorphous-Ta40Si14N46 films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution transmission electron microscopy and high-angle annular dark-field and energy-dispersive x-ray analyses. At 800 °C clusters of about 2 nm in size indicate that compositional inhomogeneities have developed while the film has still remained structurally amorphous. The sample annealed at 900 °C contains a high density of nanograins of TaN measuring about 2 nm as well as amorphous structures measuring 75–100 nm having a high tantalum content. After annealing at 1000 °C, an almost entirely crystalline structure is observed with 4-nm-sized particles of cubic TaN and 15-nm-sized grains of Ta5Si3. Possible mechanisms driving these structural changes are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377626
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  • 7
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    Structure–function relationships in HIV‐1 Nef (2001)
    EMBO Press
    Details
    Publication Date: 2001-07-01
    Print ISSN: 1469-221X
    Electronic ISSN: 1469-3178
    Topics: Biology , Medicine
    Published by EMBO Press on behalf of European Molecular Biology Organization.
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