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  • American Institute of Physics (AIP)  (5)
  • American Geophysical Union (AGU)
  • American Meteorological Society (AMS)
  • EMBO Press
  • 2000-2004
  • 1995-1999  (5)
  • 1990-1994
  • 1999  (3)
  • 1998  (2)
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  • 2000-2004
  • 1995-1999  (5)
  • 1990-1994
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 460-462 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate an optical two-beam deflection setup for in situ stress measurements in thin films. By using improved position sensitive photodetectors we reach a resolution of better than 10−4 m−1 for substrate curvature measurement at a bandwidth of 1 kHz, with a relatively short optical path of 0.53 m and without employing a lock-in technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3065-3070 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined investigation of intrinsic stress formation by in situ substrate curvature measurements and of surface morphology evolution by scanning tunneling microscopy during the growth of amorphous Cu-Ti and Co-Tb films is reported. Intrinsic tensile stress and surface morphology are clearly correlated: all films that show intrinsic tensile stress formation in the late growth stages exhibit a cluster-like surface morphology and vice versa. Both the magnitude of the intrinsic tensile stress and the cluster size at the surface depend systematically on the reduced substrate temperature during film preparation. This dependence fits Hoffman's model for tensile stress formation in thin films. Thus, the observed surface clusters are probably the top domes of growth columns, and the atomic mismatch at the column boundaries gives rise to tensile stress formation. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 40 (1999), S. 6189-6208 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The osp(1,2)-covariant Lagrangian quantization of irreducible gauge theories is generalized to L-stage reducible theories. The dependence of the generating functional of Green's functions on the choice of gauge in the massive case is discussed and Ward identities related to osp(1,2) symmetry are given. Massive first-stage theories with closed gauge algebra are studied in detail. The generalization of the Chapline–Manton model and topological Yang–Mills theory to the case of massive fields are considered as examples. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 40 (1999), S. 674-698 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The osp(1,2)-covariant Lagrangian quantization of general gauge theories is formulated which applies also to massive fields. The formalism generalizes the Sp(2)-covariant Batalin–Lavrov–Tyutin (BLT) approach and guarantees symplectic invariance of the quantized action. The dependence of the generating functional of Green's functions on the choice of gauge in the massive case disappears in the limit m→0. Ward identities related to osp(1,2) symmetry are derived. Massive gauge theories with closed algebra are studied as an example. © 1999 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2401-2403 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold. © 1999 American Institute of Physics.
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