ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract An investigation is made of a set of n-type porous-silicon structures exhibiting high electroluminescence efficiency and low degradation, and results are presented. These results demonstrate that operating voltages corresponding to those of standard ceramic-metal-oxide-semiconductor technology can realistically be achieved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1261708
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