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  • 1
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Two-dimensional solitary kinetic Alfvén waves and dipole vortex structures' " [Phys. Plasmas 4, 611 (1997)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3447-3447 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872489
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional solitary kinetic Alfvén waves and dipole vortex structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 611-617 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of density soliton, which we call "dipole density soliton,'' is discovered in data from the Freja satellite. Like the dip or hump density solitons that were recently discovered in the Freja data [D.-J. Wu, G.-L. Huang, and D.-Y. Wang, Phys. Plasmas 3, 2879 (1996)], the dipole density solitons are also associated with strong electric spikes (∼ a few 100 mV/m) and have a spatial scale length of a few 100 m. This indicates that the three types of density solitons (dip, hump, and dipole) probably have the same physical nature. In this paper, a two-dimensional solitary kinetic Alfvén wave (SKAW) model with a dipole vortex structure is proposed to account for the three kinds of density solitons (dip, hump, and dipole), in which the differences in their appearances can naturally be attributed to differences in the positions and directions at which the satellite crosses dipole vortex structures. Some features of this two-dimensional SKAW model are discussed, and the results are compared to the one-dimensional cases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872181
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n+-type doped GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3889-3891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance (ER) spectra of an undoped n+-type doped GaAs have been measured over a range of temperature from 25 to 400 K. Many Franz–Keldysh oscillations were observed above the band-gap energy, which enabled the electric field strength and, hence, also the Fermi level to be determined. The photovoltaic effect is shown to be negligible, even at the low temperature. The experiment shows that the Fermi level decreases with increasing temperature and has almost the same temperature dependence as the energy gap. It is pinned at about 0.63 of energy gap below the conduction band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120535
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  • 4
    Electronic Resource
    Electronic Resource
    Electroreflectance of surface-intrinsic- n+-type doped GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3089-3091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance spectra of surface-intrinsic- n+-type-doped GaAs were measured at various bias voltages (Vbias). Results revealed many Franz–Keldysh oscillations (FKOs) above the band-gap energy, which have been attributed to a uniform electric field (F) in the undoped layer below the surface. However, there has been no other evidence for the uniformity of F in the undoped layer. Since it is known that F can be deduced from the periods of the FKOs, the relations between F and Vbias can, thereby, be obtained. The nearly linear relation, thus found, confirms the existence of a nearly uniform field in the undoped layer. From the plot of F against Vbias,the values of the thickness of the undoped layer and the barrier height can also be evaluated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366148
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  • 5
    Electronic Resource
    Electronic Resource
    Multiple optical paths in a self-seeding scheme for multiwavelength short pulse generation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1305-1307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simultaneous generation of multiwavelength short pulses is demonstrated by self-injection seeding of a laser diode. The wavelengths are selected by the use of multiple optical paths in an external cavity consisting of a grating, a beam splitter, and two mirrors. By adjusting the grating and either one of the mirrors, the wavelengths and their spacings can be readily tuned in a flexible manner. The system is simple, robust, and is of low cost. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119879
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  • 6
    Electronic Resource
    Electronic Resource
    Strain determination in heteroepitaxial GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 829-831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual strains have been evaluated in a variety of GaN layers grown on sapphire or 6H-SiC from wafer curvature at 293 K, which avoids needing to know the unstrained lattice parameters or energy gap of GaN in advance. Estimated strains at 1.7 K are correlated with the energy of the A free exciton to determine its strain dependence. We find that strain-free GaN has an A exciton energy of 3.468±0.002 eV at 1.7 K, and 293 K lattice parameters a=3.1912 Å and c=5.1836 Å. These values imply that GaN on SiC is frequently under net biaxial compressive stress due to residual lattice mismatch stress, and that several hundred μm thick GaN layers on sapphire and homoepitaxial layers grown on bulk platelets grown at high pressure are both under about 1×10−3 in-plane compressive strain. These conclusions conflict with most previous assumptions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119659
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  • 7
    Electronic Resource
    Electronic Resource
    A noninvasive bunch length monitor for femtosecond electron bunches (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bunch length monitor for ultrashort (90 fs to 1 ps) electron bunches using a coherent synchrotron radiation detection techniques has been developed in a collaboration between the Thomas Jefferson National accelerator Facility (Jefferson Lab) and the University of Virginia. The noninvasive, high-resolution, high-sensitivity, low-noise monitor employs a state-of-the-art "bandpass" GaAs Schottky whisker diode operated at room temperature. This letter presents the monitor's performance. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118423
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "A noninvasive bunch length monitor for femtosecond electron bunches" [Appl. Phys. Lett. 70, 529 (1997)] (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2481-2481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119269
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  • 9
    Electronic Resource
    Electronic Resource
    Structural and magnetic properties of epitaxially grown Fe–Sm and Fe–Sm–N films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4664-4666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Fe–Sm–N films with thickness ≥50 nm and coercivities ≥4 kOe were grown on an α-Ta (110) substrate by dc magnetron sputtering. Transmission electron microscopy diffraction data clearly showed that the films were polycrystalline with the ThMn12 tetragonal structure and with a preferential orientation of (011) Fe–Sm//(110) Ta. This resulted in a uniform distribution of the easy axis on a cone of 29° to the film normal. The structural data were also supported by the hysteresis loops measured as a function of angle in plane and out of plane. The high coercivity phase was obtained from targets with 15–20 at. % Sm. For the 10 at. % Sm target, only a soft α-Fe phase was formed. For films of 〈50 nm sputtered from 15 to 20 at. % Sm, a soft phase was clearly observed in the vibrating sample magnetometer and was the only soft phase formed in 10 nm thick films. However, films of 〉50 nm thickness showed high coercivities without a kink in the demagnetization loops and seemed to be composed only of magnetically hard phase, which was probably due to strong magnetic interactions between magnetically soft and hard phases at the Fe–Sm/Ta interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365518
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  • 10
    Electronic Resource
    Electronic Resource
    Phonon modes of ZnS1−xTex alloys epitaxially grown on (100) GaAs substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3465-3467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex(0〈x〈1) alloys grown on (100) GaAs substrates by molecular beam epitaxy are investigated using the x-ray diffraction and Raman scattering. The frequencies of long wavelength ZnTe-like and ZnS-like longitudinal optical phonons determined from Raman scattering show linear variation with the composition x. The frequency of the zone-center optical phonons as a function of x of the ZnS1−xTex mixed crystal shows a typical two-mode behavior, which is in good agreement with the theoretical results from a modified random-element isodisplacement model.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365043
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