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  • American Institute of Physics  (34)
  • American Institute of Physics (AIP)  (26)
  • Oxford University Press  (17)
  • 2005-2009
  • 1995-1999  (77)
  • 1990-1994
  • 1997  (77)
Collection
Publisher
Years
  • 2005-2009
  • 1995-1999  (77)
  • 1990-1994
Year
  • 1
    Electronic Resource
    Electronic Resource
    X-ray lasing in colliding plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3718-3724 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conditions favorable for the achievement of population inversion and large gains in short-pulse laser-heated selenium have been reported on previously [K. G. Whitney et al., Phys. Rev. E50, 468 (1994)]. However, the required density profiles to minimize refraction and amplification losses can be difficult to achieve in conventional laser heated blowoff plasmas. The feasibility of accelerating plasma with a laser, and letting it collide with a solid density wall plasma has been explored. The density of the resulting shocked plasma can be controlled and refraction can be reduced in this design. A radiation hydrodynamics model is used to simulate the collision of the laser produced selenium plasma with the wall plasma. The heating of the stagnated plasma with a short-pulse laser is then simulated, providing the hydrodynamic response of the selenium plasma and detailed configuration nonequilibrium atomic populations. From the results of these calculations, it appears feasible to create an x-ray lasing selenium plasma with gains in the J=0–1 line at 182 Å in excess of100 cm−1. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872559
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  • 2
    Electronic Resource
    Electronic Resource
    Electrodynamic trapping and manipulation of particle clouds (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 70-78 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Apparatus and techniques were developed to electrodynamically trap and manipulate groups of microparticles. The equipment consists of a vibrating orifice aerosol generator, an inductive particle charger, a plenum chamber, and a double-ring electrodynamic balance. Salt particles (NaNO3) of controllable and measurable mass and charge were produced and introduced into the balance in nitrogen at flow rates up to 25 cm3/min. Ordered arrays of any number of particles up to 26 were assembled and manipulated. Methods for compressing the arrays are presented, and controlled ejection of single particles from a trapped array is demonstrated. Particles of opposite polarity were successfully levitated and kept apart, and aggregation of these particles was then induced by changing the electric field. Raman spectra were recorded for multiple salt particles, each having a diameter of 3.5 μm, by aligning them in a laser beam. The enhanced Raman signal is compared with that from a single particle isolated from the array. From the results, a detection limit of 0.4 pg per particle was estimated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147682
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  • 3
    Electronic Resource
    Electronic Resource
    Progress toward a microsecond duration, repetitively pulsed, intense-ion beam for active spectroscopic measurements on ITER : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 332-335 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design of an intense, pulsed, repetitive, neutral beam based on magnetically insulated diode technology for injection into ITER for spectroscopic measurements of thermalizing alpha particle and thermal helium density profiles, ion temperature, plasma rotation, and low Z impurity concentrations throughout the confinement region. The beam is being developed to enhance low signal-to-noise ratios expected with conventional steady-state ion beams because of severe beam attenuation and intense bremsstrahlung emission. A 5 GW (e.g., 100 keV, 50 kA) 1 μs duration beam would increase the charge exchange recombination signal by 103 compared to a conventional 5 MW beam. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147862
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  • 4
    Electronic Resource
    Electronic Resource
    Time-dependent and nonlinear effects in electrorheological fluids (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1985-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integral equation method is used to calculate particle–particle forces in electrorheological fluids. The method focuses on the gap region between particles where large electric-field concentrations occur. Effects due to time-dependent excitation and nonlinear (field-dependent) fluid conductivity are analyzed. It is found that the response to step-function changes in applied field closely follows a simple form that can be derived from the dipole approximation. Qualitatively different stress-vs-time curves are obtained for large dielectric mismatch (e.g., barium titanate/dodecane) relative to large conductivity mismatch (zeolite/silicone oil). In fluids where the conductivity is strongly field dependent, it is found that particle–particle forces scale linearly with applied field E0 at large fields. Likewise, the shear yield stress scales as E03/2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364231
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation density reduction via lateral epitaxy in selectively grown GaN structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2472-2474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and the lateral epitaxy mechanism of formation of homoepitaxially and selectively grown GaN structures within windows in SiO2 masks have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy. The structures were produced by organometallic vapor phase epitaxy for field emission studies. A GaN layer underlying the SiO2 mask provided the crystallographic template for the initial vertical growth of the GaN hexagonal pyramids or striped pattern. The SiO2 film provided an amorphous stage on which lateral growth of the GaN occurred and possibly very limited compliancy in terms of atomic arrangement during the lateral growth and in the accommodation of the mismatch in the coefficients of thermal expansion during cooling. Observations with TEM show a substantial reduction in the dislocation density in the areas of lateral growth of the GaN deposited on the SiO2 mask. In many of these areas no dislocations were observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120091
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  • 6
    Electronic Resource
    Electronic Resource
    Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10–100 nA and required grid voltages ranging from 20–110 V. The grid currents were typically 1 to 104 times the collector currents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120052
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  • 7
    Electronic Resource
    Electronic Resource
    Field emission properties of diamond films of different qualities (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission properties of diamond films were studied by macroscopic I–V measurement. A lower turn-on field and a higher emission current were observed for diamond films produced by higher methane concentration, or with higher density of defects, introduced by ion implantation. However, diamond films of poorer quality experience a severe reliability problem. Cold implantation followed by rapid thermal or laser annealing produced diamond emitters with a turn-on field as low as 5 V/μm and the desired reliability. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120024
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  • 8
    Electronic Resource
    Electronic Resource
    Raman analysis of the configurational disorder in AlxGa1−xN films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2157-2159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman analysis of the E2 mode of AlxGa1−xN in the composition range 0≤x≤1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition x≅0.5 indicative of a random disordered alloy system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119367
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  • 9
    Electronic Resource
    Electronic Resource
    A phase-locked shear-force microscope for distance regulation in near-field optical microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 405-407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonoptical phase-locked shear-force microscope utilizing a quartz crystal tuning fork acting as a voltage-controlled oscillator in a phase-locked loop has been implemented. A tapered optical fiber is rigidly mounted on one of the prongs of the fork to serve as both a shear-force pickup and a near-field optical probe. The crystal is driven at its resonance frequency through positive feedback of the monitored current through the crystal. This signal is used as the voltage-controlled oscillator in a phase-locked loop. The scheme allows for scan speeds far beyond the Q-limited amplitude sensor bandwidth and exhibits excellent sensitivity for a high-Q resonator. Furthermore, given the small vibration amplitude of the tip (〈0.5 nm) and the distance over which it is reduced (〉 6 nm), it is unlikely that the tip is making direct contact with the sample surface as has been suggested for the optical shear-force detection scheme. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118318
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  • 10
    Electronic Resource
    Electronic Resource
    Ultra-low resistive ohmic contacts on n-GaN using Si implantation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 464-466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4×1020 cm-3 to decrease the contact resistance of the contact, followed by an activation anneal at 1150 °C for 30 s. The overlay metal Ti/Au was evaporated. Four-probe measurements were performed on transmission line model patterns. The measured maximum contact resistance was 0.097 Ω mm and the apparent specific contact resistance was 3.6×10−8 Ω cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118182
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