ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (15)
  • Cell Press
  • 2010-2014
  • 1995-1999  (15)
  • 1999  (7)
  • 1997  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371369
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance mapping of InAlAs Schottky diode layer on InAlAs/InGaAs high electron mobility transistor wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 374-379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniformity of surface layer characteristics of InAlAs Schottky diodes, the so-called level-shift diodes, on InAlAs/InGaAs high electron mobility transistors is noninvasively examined by photoreflectance (PR) spectroscopy, on-wafer mapping of PR signal intensity at a particular wavelength, and analyzed data. From the observed Franz–Keldysh oscillations, we have been able to evaluate the built-in dc electric fields in the i–n+, or so-called UN+, InAlAs Schottky diode layer. The on-wafer fluctuation of the electric fields in the diode layer, which is due to the fluctuation of the thickness of the diode layer, is clearly visualized by on-wafer mapping. Nonuniform composition of the InAlAs diode layers is also observed. The shape of the contour lines in the map of the PR signal intensity is related to the structure of the growth equipment. Our results suggest that photoreflectance mapping is quite effective for noninvasive screening of device epiwafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370741
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependent lasing characteristics of multi-stacked quantum dot lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 193-195 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of self-formed quantum dot lasers with a multi-stacked dot layer has been investigated in detail. Lasers oscillating at different subbands exhibit different behaviors against temperature change both in the spectral characteristics and the threshold current. A discontinuous shift of lasing wavelength from the second subband to the ground state is observed with lowering temperature, which is strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher-order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60–200 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120426
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Critical temperature of 1.3 μm InP-based strained-layer multiple-quantum-well lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2683-2685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the critical behavior of 1.3 μm InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers at elevated temperatures. We show that, under the critical injection condition where the carrier density in the quantum wells reaches the maximum possible without causing any extra pile-up of carriers in the separate heterostructure confinement regions, an InP-based SL-MQW system exhibits an absorption-to-gain phase transition at some critical temperature (Tc). The characteristic feature of this phase transition shows excellent agreement with Landau theory of second-order phase transitions. It is demonstrated that Tc is a significant and meaningful quantity not only for laser design but also for characterizing the nature of an InP-based SL-MQW system in terms of condensed matter physics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120178
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Dielectric-base transistors with doped channel (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2900-2902 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric-base transistor (DBT) is expected to be coupled with various functional oxides such as high-temperature superconductors and ferroelectrics. We experimented with lowering the conduction band of the channel to reduce the operating voltage. LaTiO3 deposited on SrTiO3 supplies carriers in the SrTiO3 substrate by displacing Sr2+ and La3+. With this technique, we fabricated a YBa2Cu3O7−x/In2O3/SrTiO3/LaTiO3/SrTiO3 transistor with a partially doped channel. The transistor operates at under 1 V while maintaining a voltage amplification factor of 2, which is one order smaller than the 15 V operating voltage of a transistor with an undoped channel. The base potential relative to the emitter conduction band has been reduced to 0.3 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Pure strain effect on reducing the chirp parameter in InGaAsP/InP quantum well electroabsorption modulators (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 87-89 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pure strain dependence of the chirp parameter (linewidth enhancement factor) of electroabsorption in the 1.55 μm window for strain ranging from compression to tension is studied theoretically in InGaAsP strained quantum well (QW) structures. The small-signal chirp parameter for TE polarization is evaluated from calculated electroabsorption (EA) spectra based on k⋅p theory and their Kramers–Krönig transformed refractive index changes. It is found that both compressive and tensile strain in the well layer reduce the chirp parameter. In a tensile-strained QW, almost continuously negative values irrespective of applied electric fields occur at an optimized amount of strain. The compressive-strained QW lowers the chirp parameter to nearly zero or negative values, the amount of the reduction being proportional to strain amount. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119316
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Lateral migration of point defects in Si induced by localized ion implantation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2663-2665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel experimental approach to investigate lateral migration of point defects in Si induced by ion implantation has been proposed. The point defects induced by localized irradiation using a focused Si ion beam with an energy of 60 keV were monitored by deep level transient spectroscopy while changing the separation among a number of line-shaped irradiated regions. A result of the experiment that the defect formation is suppressed at a smaller separation is explained by the lateral migration of self-interstitials and annihilation with vacancy-type defects. The migration distance of the interstitials is also evaluated quantitatively and discussed in comparison with the trap-limited-diffusion model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123931
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electron transport properties through InAs self-assembled quantum dots in modulation doped structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electron transport properties through InAs self-assembled quantum dots in a modulation-doped structure with split gates. We observed drain current modulation with respect to gate voltage due to electron transport through the quantum level of InAs dots. The energy gaps estimated from the temperature dependence study of valley current and the voltage difference between the drain current peaks were consistent with each other and as large as 14 meV. The energy gaps can be explained by the charging energy of the InAs dots. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118840
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Room temperature operation of Si single-electron memory with self-aligned floating dot gate (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1742-1744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to precisely control the size and position of the floating dot gate and the channel indicates the feasibility of practical single-electron memory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118653
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3652-3654 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports on a simple technique for fabricating Sn nanocrystals in thin SiO2 film using low-energy ion implantation followed by thermal annealing. These Sn nanocrystals have excellent size uniformity and position controllability. Their average diameter is 4.8 nm with a standard deviation of 1.0 nm. Most of the Sn nanocrystals reside at the same depth. The lateral edge-to-edge spacing between neighboring Sn nanocrystals is fairly constant: about 3 nm. A narrow as-implanted ion distribution profile and the effect of the SiO2–Si interface are considered to contribute to the size uniformity and position controllability. The features of these nanocrystals will open up new possibilities for novel devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120470
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...