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  • 1
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363112
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  • 2
    Electronic Resource
    Electronic Resource
    Hollow-anode plasma source for molecular beam epitaxy of gallium nitride : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 905-907 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146834
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of ion implanted boron in preamorphized silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A comparison of 4 keV, 1× 1014/cm2 boron implants into crystalline and Ge+ preamorphized silicon was undertaken. Upon annealing the B+ implant into crystalline material exhibited the well-known transient enhanced diffusion (TED). In this case the peak of the boron distribution was relatively immobile and only B in the tail showed TED. In the second set of samples, the surface was first preamorphized by a 180 keV, 1×1015/cm2 Ge+ implant which produced an amorphous layer 2300 A(ring) deep, which then was implanted with boron. After implantation the tail of the B distribution extended to only 700 A(ring). Upon annealing, TED of the boron in the regrown Si was also observed, but the diffusion profile was very different. In this case the peak showed no clustering, so the entire profile diffused. The time for the TED to decay was around 15 min at 800 °C. TEM results indicate that the (311) defects in the end of range damage finish dissolving between 10 and 60 min at 800 °C. These results indicate that for these Ge preamorphization conditions, not only do the end of range defects not block the flow of interstitials into the regrown silicon, the (311) defects in the end of range damage act as the source of interstitials. In addition, boron does not appear to cluster in regrown silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116277
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116314
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