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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
  • 1996  (2)
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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3793-3795 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carbon doping of InxGa1−xAsyP1−y alloys grown by chemical beam epitaxy was studied in the whole range of compositions lattice matched to InP, using carbon–tetrabromide as a source of carbon. The conductivity changed from p- to n-type when going from In0.53Ga0.47As to InP, with a transition point at a composition corresponding to a wavelength of 1.35 μm. The carbon doped n-type quaternaries were found to be very compensated even for compositions close to InP. The p-type quaternaries showed little compensation near the transition point, and almost no compensation for compositions close to In0.53Ga0.47As. Reducing the V/III ratio, while keeping all other growth parameters unchanged, increased the incorporation of the carbon atom, and reduced the compensation for p-type quaternaries. The inversion point position did not change appreciably when the quaternaries were grown with a halved V/III ratio. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3564-3566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we demonstrate an inverse twisted nematic device in which the input polarized light is unaffected in the field-off state and produces a polarization rotation in the field-on state. This is done by using a homeotropically aligned sample containing chiral nematic liquid crystal with negative dielectric anisotropy and specially prepared surfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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