ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (2)
  • Elsevier
  • Oxford University Press
  • 1995-1999  (2)
  • 1996  (2)
Collection
Publisher
Years
  • 1995-1999  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4999-5001 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic domain structures of thick and small area (45×45×5 μm3) Fe-M(Zr or Ta)-N films were observed by a scanning Kerr-effect microscope (SKEM). The important factors in controlling the magnetic domains are the magnetostriction and the uniaxial anisotropy. By changing the N content in bcc Fe and the Ar pressure during sputtering, the saturation magnetostriction constant λs and the anisotropy field Hk were controlled in the range of 3×10−6–6×10−6 and 10–130 A/m, respectively. Clear and consecutive changes in the domain structures were observed by varying the film's λs, Hk, and stress σ, and the observed structures agree qualitatively with the structures predicted by theoretical calculations. The wall structure where Bloch-like rotations and the Neel-like rotations are combined was observed by SKEM. The metal in gap heads using different λs and Hk films were fabricated and the output at 20 MHz was measured. A lower Hk is not necessarily better for obtaining a higher output in high-frequency ranges. The head output depends on the film's magnetic domain structure, and the structure can be controlled by changing the λs and Hk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1297-1299 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...