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  • American Institute of Physics (AIP)  (3)
  • Blackwell Publishing Ltd  (1)
  • MDPI Publishing
  • National Academy of Sciences
  • 1995-1999  (4)
  • 1996  (4)
Collection
Publisher
Years
  • 1995-1999  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Factors suppressing transport critical current in Ag/Bi2223 tapes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7877-7882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural factors limiting the critical current density Jc have been investigated for the silver-sheathed Bi2223 tapes prepared by the powder-in-tube technique. In a hierarchy among them, which factor is the most effective in determining Jc depends on how extensively each of them occurs. The Jc was found to increase when the volume fraction of 2223 phase increases, suggesting the importance of the connectivity among 2223 grains. The Jc also increased with decreasing amount of residual carbon. The temperature and magnetic field dependences of Jc indicated characteristics of Josephson currents through superconducting–normal–superconducting barriers. After a discussion based on the alternative current limiting mechanisms proposed up to now, it is suggested that the homophase grain boundary limits the Jc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362398
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrahigh resolution of calixarene negative resist in electron beam lithography (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1297-1299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115958
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of thermal oxidation of AlAs in water vapor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1898-1900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the lateral thermal oxidation of AlAs in water vapor in vertical cavity surface emitting laser structures. At low temperatures and short oxidation times, oxide growth was found to be reaction rate limited. Conversely, diffusion across the oxide was the rate controlling mechanism at higher temperatures and longer oxidation times. Lasers are typically processed at intermediate values of temperatures and time. The observed growth can be modeled by rate equations by which the two component growth mechanisms can be separated. Activation energies of 1.6 and 0.8 eV were determined for the reaction rate and diffusion limited mechanisms, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116287
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  • 4
    Electronic Resource
    Electronic Resource
    Evaluation of three individual glucosyltransferases produced by Streptococcus mutans using monoclonal antibodies (1996)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 145 (1996), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract We previously established murine hybridomas producing a monoclonal antibody monospecific against three glucosyl-transferases (I, SI and S) of Streptococcus mutans which contribute to dental caries formation. Here, we developed a new immunochemical technique (cross-dot system) with which individual levels of glucosyltransferases expressed by S. mutans can be evaluated. We also examined glucosyltransferase production and in vitro artificial plaque formation by a reference strain and several clinical isolates of S. mutans. The findings indicate that the levels of glucosyltransferases produced greatly vary with the cells and the culture medium, and that the cells producing high levels of both glucosyltransferase-SI and glucosyltransferase-I enzymes may possess high in vitro artificial plaque forming ability. We suggest that the cross-dot system will be useful for estimating the cariogenic potential of S. mutans isolates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1574-6968.1996.tb08611.x
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