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TaSi2-Si composites as wide-bandpass optical elements for synchrotron radiation : The 9th National conference on synchrotron radiation instrumentation (1996)

Stock, Stuart R. ; Neumann, Hans-Bernd ; Suessenback, Joerg ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 67 (1996), S. 3355-3355

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: The wide matrix rocking curves of the in situ eutectic composite TaSi2-Si make it attractive as a wide-bandpass monochromator for synchrotron radiation. Wafers with Si[111], Si[110], or Si[100] orientation were studied to determine the origin of the wide rocking curves. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix was examined using synchrotron Laue patterns and the TaSi2 [100], TaSi2 [003], and TaSi2 [102] reflections. Double and triple axis diffractometry were used to show that the large widths were due to strain and mosaic and not long-range bending; copper radiation (for some double axis results) and 120 and 160 keV synchrotron radiation were used. At 8 keV, rocking curve widths were about twenty times broader than those from perfect Si, and peak reflectivities approached 20%. Rocking curves from Si[333] and Si[444] (120 and 160 keV, respectively) had identical profiles and reflectivities of about 25%. The triple axis results show compressive strains in the Si matrix along Si[111] (i.e., parallel to the rods) and dilational strains orthogonal to the rods. These results confirm the promise of TaSi2-Si as a wide-bandpass optical element for synchrotron radiation. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1147373

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Toward the development of high resolution synchrotron x-ray diffraction tomography of polycrystalline materials : The 9th National conference on synchrotron radiation instrumentation (1996)

Stock, Stuart R. ; Piotrowski, D. P. ; Guvenilir, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 67 (1996), S. 3358-3358

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: In understanding the macroscopic response of polycrystalline structural materials to loading, it is frequently essential to know both the three-dimensional distribution of strain and of microtexture. The methods must be nondestructive, however, if the evolution of quantities, such as strain at a fatigue crack tip, are to be studied. This paper describes approaches for high resolution synchrotron x-ray diffraction tomography of polycrystalline materials. Preliminary experiments are reported on partially cracked compact tension samples of Al-Li 2090 and on model samples of randomly packed, millimeter-sized single crystals. Polychromatic beams collimated to diameters as small as 30 μm have been used, and collecting the spatial distribution of diffracted intensity on image storage plates as a function of sample-to-detector separation allowed inference of the depth of the volume elements contributing to diffraction. The precision to which one can determine the depths of volume elements will be discussed as well approaches for three-dimensional, nondestructive strain mapping. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1147381

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Characterization of TaSi2–Si composites for use as wide-bandpass optical elements for synchrotron radiation (1996)

Stock, S. R. ; Rek, Z. U. ; Goorsky, M. S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 6803-6810

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The wide rocking curves of matrix reflections of the in situ eutectic composite TaSi2–Si make wafers of this material attractive for use as wide-bandpass monochromators for synchrotron radiation, and characterization of wafers of TaSi2–Si for use with energies normally accessible at storage rings (i.e., 5–40 keV) is the focus of the present report. A wafer with [111]Si orientation and a wafer with [110]Si orientation are studied. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix is examined using synchrotron Laue patterns, and the 100TaSi2, 003TaSi2, 101TaSi2, and 102TaSi2 reflections are used to establish the orientation relationship and to determine that the spread of rod orientations is at least 5° and probably no greater than 6°. Double-axis diffractometry with Cu Kα radiation reveals matrix reflections with rocking curve widths that are about 20 times broader than those from perfect Si and with peak reflectivities approaching 20%. The rocking curves widths are found to be relatively insensitive to irradiated area, thus indicating that most of the observed width is not due to long-range bending. Triple-axis diffractometry with Cu Kα radiation reveals that considerable compressive strain exists in the matrix and that much of the width of the diffraction peak is due to mosaicity. The performance of the [111]Si TaSi2–Si wafer and a perfect [111] Si wafer as monochromators for microradiography are compared, and a gain of an order of magnitude in x-ray intensity delivered to the sample is demonstrated with the composite crystal. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361501

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