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  • Springer  (13)
  • American Institute of Physics (AIP)  (10)
  • American Association for the Advancement of Science (AAAS)  (1)
  • American Society of Hematology  (1)
  • International Union of Crystallography  (1)
  • 1995-1999  (26)
  • 1996  (26)
  • 1
    Electronic Resource
    Electronic Resource
    Applied-voltage induced fatigue of lithium niobate waveguide (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: z-cut lithium niobate optical modulator devices were ac (Vp-p=20 V) operated at 130 °C with an accumulated dc bias voltage of 4 and 8 V. A consequent dc drift phenomenon was larger for the 8 V bias application. After the operation, inversed domains were found along the Mach–Zehnder waveguides, particularly on the waveguide placed under the hot electrode. The results suggested that the device operation at higher voltage and temperature led to an accelerated dc drift and a fatiguelike deterioration of the lithium niobate material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116066
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  • 2
    Electronic Resource
    Electronic Resource
    Migration of a Si microcluster due to the electron wind on a Si(001) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1493-1494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At a high temperature of about 1500 K, the migration of a Si microcluster was observed on a Si(001) surface by using an electron microscope. This cluster always existed together with an attendant region. This region melted first during heating because of its lower crystallinity compared to the Si substrate. The Si atoms in this melted zone were struck by electrons moving towards the anode and were pushed by the electron wind in the same direction as the electrons. The Si microcluster floating in the melted zone also migrated toward the anode side about ten times as fast as the Si electromigration atoms moving in the opposite direction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116265
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  • 3
    Electronic Resource
    Electronic Resource
    Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4185-4190 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a multifunctional surface analysis system based on a scanning electron beam for nanofabrication and characterization of surface reactions for fabrication processes. The system performs scanning electron microscopy (SEM), scanning reflection electron microscopy (SREM), Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy. Nanometer scale resolution is obtained for ultrahigh vacuum (UHV)-SEM while the mechanical pumping instruments are operated. Single atomic steps on Si(111) surfaces are observed through SREM. Surface sensitive AES measurement is achieved with SREM geometry; this has a great advantage for investigating atomic step related surface reactions. High spatial resolution AES analysis is also achieved by using a nanometer scale probe beam. Auger electron signals from a hundred Ag atoms on a Si(111) surface are successfully detected with high sensitivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147567
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  • 4
    Electronic Resource
    Electronic Resource
    A nanoscale self-organization induced by removing Ga atoms on the Si(111)–(square root of 3)×(square root of 3)–Ga surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 770-772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel self-organization has been found to modify the Si(111)–(square root of 3)×(square root of 3)–Ga surface on the nanometer scale with atomic accuracy. The self-organization is induced by removing Ga atoms from a certain area on the entire (square root of 3)×(square root of 3)–Ga surface with a tip of scanning tunneling microscopy. Using this phenomenon, a stripe 7.0 nm in width and more than 140 nm in length of the Si(111)–7×7 structure has been successfully formed on the (square root of 3)×(square root of 3)–Ga surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116737
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  • 5
    Electronic Resource
    Electronic Resource
    Initial stage of layer-by-layer sputtering of Si(111) surfaces studied by scanning reflection electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2514-2516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stage of layer-by-layer sputtering of Si(111) surfaces with 500 eV Ar ions has been studied by using scanning reflection electron microscopy. At a moderate temperature of 900 K, vacancy islands are formed in the middle of wide terraces. At higher temperatures over 990 K, the atomic steps retreat as the ion dose is increased. The results show that layer-by-layer sputtering is characterized by vacancy creation caused by ion impact, and by thermally activated surface migration of vacancies. Moreover, the step area decorated by electron-beam-assisted carbon deposition acts as a step pinning site during the layer-by-layer sputtering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115839
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  • 6
    Electronic Resource
    Electronic Resource
    Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2213-2215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surfactant-mediated heteroepitaxy of Ge on Si(111) with Ga as surfactant has been studied using a recently developed apparatus of scanning reflection electron microscopy combined with scanning tunneling microscopy. It has been found that Ge film formation of 4.3 ML thickness on a Ga-terminated (square root of)3×(square root of)3 surface results in two-dimensional island growth in contrast with pseudomorphic growth on 7×7 surface. Irregular growth of Ge clusters along the lower sides of atomic step edges also takes place on the (square root of)3×(square root of)3 surface at an elevated substrate temperature. Ge film was also grown on partially Ga-terminated Si(111) with both Ga-adsorbed (square root of)3×(square root of)3 and Ga-desorbed 7×7 reconstruction areas on the surface. It has been found that self-organized Ge clustering occurs along the Ga-desorbed 7×7 area with stripe shape. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115862
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  • 7
    Electronic Resource
    Electronic Resource
    Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beams (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 638-640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that selective thermal desorption of SiO2 on Si (111) substrate is induced by electron-beam irradiation. By using this selective thermal desorption, a nanofabrication technique has been realized by focused electron beams. Open windows of 10 nm width in a SiO2 film have been fabricated by this technique. A pattern transfer from the open windows to thin Si films has also been performed by Si growth and subsequent heating. This has produced Si wires of 10 nm width. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117932
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  • 8
    Electronic Resource
    Electronic Resource
    Stripe patterns formed by the thermal desorption of Ga atoms on Ga-terminated Si(111) surfaces (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 631-633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si(111)-7×7 area surrounded by the Si(111)-(square root of)3×(square root of)3R30°-Ga region has been observed by scanning tunneling microscopy during the thermal desorption of Ga atoms at ∼600 °C and after the desorption. The 7×7 area exhibits triangular and strip patterns on the nanometer scale for the Si(111) substrates tilting toward the [112¯] and [1¯1¯2] directions, respectively. This is because faulted halves of the 7×7 reconstruction are adjacent to the (square root of)3×(square root of)3-Ga area on the boundary between the 7×7 and (square root of)3×(square root of)3-Ga areas during Ga desorption. It has been found that strip patterns with nanometer-scale precision are formed on the Si(111) substrates tilting toward the [1¯1¯2] direction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116491
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfaces (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1382-1384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of partially Ga-terminated Si(111) surfaces with clean 7×7 striped areas along atomic step edges was investigated using scanning reflection electron microscopy. Molecular oxygen exposure of 100 L at the substrate temperatures of 410 °C oxidized Ga atoms on the Ga-terminated areas as well as Si atoms on the clean 7×7 areas. The Ga oxides were selectively desorbed over the Si oxides during annealing. This results in the formation of stripe-patterned Si oxides on the surface. After growth of an 8-monolayer Si film and subsequent annealing, Si grooves with a depth of about 1 nm and a width around 200 nm were formed along the step edges by excess Si-assisted thermal desorption of the Si oxides. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117588
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  • 10
    Electronic Resource
    Electronic Resource
    The driving force of Si adsorbate transfer on a Si(001) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 532-534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The driving force of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. When the sample is heated by direct current, the transferred length of the adsorbates x is proportional to the square root of the heating time t at t〈tc and x is proportional to t at t(approximately-greater-than)tc, where tc is the critical time. This indicates that the dominant force of the Si adsorbates changes from thermal diffusion to electromigration at tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117777
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