Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2222-2224
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method to bond silicon wafers directly at room temperature was developed. In this method, surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum. By the infrared microscope and KOH etching method, no void at the bonded interface was detected in all the specimens tested. In the tensile test, fracture occurred not at the interface but mainly in the bulk of silicon. From these results, it is concluded that the method realizes strong and tight bonding at room temperature and is promising to assemble small parts made by the silicon wafer process. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115865
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