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Synthesis and characterisation of gallium antimonide nanoparticles: reaction between tris (trimethylsilyl)antimonide and gallium trichloride (1996)

Schulz, Stephan ; Martinez, Leonardo ; Ross, Jean L.

New York, NY [u.a.] : Wiley-Blackwell

Advanced Materials for Optics and Electronics 6 (1996), S. 185-189

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ISSN: 1057-9257

Keywords: semiconductor ; III-V materials ; GaSb ; nanocrystals ; SEM ; TEM ; electron diffraction ; dehalosilylation ; Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: The reaction between GaCl3 and Sb(SiMe3)3 in a 1:1 mole ratio at 110°C in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses. Microscopy studies (SEM and TEM) show the formation of nanocrystals with a predominant crystal size of 20-30 nm.

Additional Material: 2 Ill.

Type of Medium: Electronic Resource

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