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  • American Institute of Physics (AIP)  (16)
  • Cell Press
  • 2020-2022
  • 1995-1999  (16)
  • 1996  (16)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 177-191 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cold fluid theory of the Pierce beam–plasma system is modified by the incorporation of warm plasma effects. The controlling parameter α in the cold theory, where α=Lωp/V0, L=diode width, ωp=plasma frequency, and V0=beam velocity at injection, is replaced in the warm theory by an effective value of α involving the thermal velocity. The theory is verified by means of a fluid simulation code; the phase states for a cold plasma, including the chaotic state, are recovered for a warm plasma, but with a shift in values of the bifurcation parameter. Furthermore, in order to include plasma kinetic effects, an extensive electrostatic particle simulation code is developed to model the Pierce system. Among the new physical effects arising in this particle model are the local and global thermalization of electrons by electrostatic waves, and blocking oscillations due to particle reflection and trapping. As the parameter α is decreased, the electric field at the injection point typically changes state as follows: blocking oscillation→small fluctuations→quasisteady oscillation→prechaotic oscillation→chaos→blocking oscillation→dc electric field. The mechanics of chaotic oscillations in the Pierce system are examined with particular regard to kinetic effects. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 965-970 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approximate analytic expression for plasma viscosity in finite aspect ratio tokamaks is constructed from all the asymptotic limits. The resultant viscosity coefficient is compared with the numerical results of the solution of the linearized drift kinetic equation. Neoclassical fluxes are reformulated in terms of the viscosity and friction coefficients. These fluxes can be employed to study the omnigeneous property of high-beta small, or large aspect ratio tokamaks. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4064-4071 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new improved fluorescence correlation spectroscopy method for determining motional states of particles, fluorescence correlation spectroscopy with traveling interference fringe excitation (FCSTFE), is described. With this method the modulated fluorescence signal from particles excited by an interference fringe moving at constant velocity is detected, and cosine and sine Fourier coefficients at the frequency of the traveling fringe [Fcos(t), Fsin(t)] are recorded. Autocorrelation functions of Fcos(t), Fsin(t), and the square of amplitude [A2(t)=Fcos(t)2+Fsin(t)2] were found to express the motion of the fluorescent particles. The apparatus utilizing a photon counting system was constructed, and the performance of the system was demonstrated by the determination of diffusion coefficients of dispersed fluorescent polystyrene spheres. Features of FCSTFE in particle dynamics evaluation are discussed. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1015-1019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the magnetization of the ultrafine cadmium ferrite particles formed during the coprecipitation method and discussed the origin of enhanced magnetization based on the magnetic properties. A transmission electron microscopy micrograph shows aggregation of fine particles having two kinds of shapes, fibrous and granular. X-ray diffraction patterns of the specimens prepared by the coprecipitation method are composed of peaks corresponding to CdFe2O4, Cd(OH)2, and α-FeO(OH). The pattern indicates that the peaks of CdFe2O4 are fairly broad, suggesting the formation of a very small crystallite, with an average size of ∼8 nm. The ultrafine CdFe2O4 particles exhibit ferromagnetic behavior and have a net magnetization of 89±5 emu/g at 6 K. These results suggest that there must be many ferromagnetic clusters consisting of Fe3+ ions at the B sites around Fe3+ ions at the A site by the A–B interactions. Thus, such a change in the distribution of Fe3+ ions in the ultrafine CdFe2O4 particles results in increasing magnetization with decreasing particle size. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2192-2197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the basic mechanism for limiting the maximum operating temperature (Tm) of InP-based multiple-quantum-well (MQW) lasers emitting at a wavelength of 1.3 μm. It is shown that laser operation is characterized in terms of the temperature dependence of threshold gain (gth) by introducing a critical temperature (Tc): gth exhibits a linear relationship with temperature below Tc, while it superlinearly increases with increasing temperature above Tc. This rapid increase in gth leads to a marked increase in threshold current and a significant reduction in differential quantum efficiency above Tc. We indicate that Tc exhibits a direct correlation with Tm: the higher Tc, the higher Tm. In the temperature range above Tc, laser operation moves into a loss-multiplication regime, where a considerable portion of the injected carriers brings about a significant increase in internal loss rather than gain due to their pileup in the separate confinement heterostructure layers. We demonstrate that an anomalous increase in internal loss, which occurs at the final stage in this loss-multiplication regime, determines Tm of 1.3 μm InP-based MQW lasers. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4006-4011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple technique for fabricating a layer of isolated Si quantum dots on SiO2 glass substrates. This technique uses conventional low-pressure chemical-vapor deposition for an extremely short deposition time in the early stage of poly-Si film growth. The layer after a deposition time of 60 s has isolated Si nanocrystals 5–20 nm in diameter and 2–10 nm in height. The measurements of optical absorption coefficient α show that the absorption edge for Si nanocrystals shifts to higher energies compared to that of bulk Si, indicating a widening of the energy gap caused by quantum size effects. The linear relationship (αhν)1/2 against hν suggests that the Si nanocrystal, whose diameter is as small as 10 nm, basically maintains the properties of an indirect band-gap semiconductor. Special attention must be paid to the Brownian migration of Si nanocrystals for fabricating Si quantum dots. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1441-1443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic precipitation from a thin, 100-nm surface layer of GaAs grown at low temperature (LT) by molecular beam epitaxy is investigated. The precipitate depth distribution is examined for different rapid thermal annealing cycles. It is found that the precipitate distribution can tail a long distance into the underlying stoichiometric GaAs layer, depending on the peak annealing temperature. The distribution for an 800 °C anneal is virtually unaffected by a prior low temperature "soak'' at 600 °C, thus showing that the precipitation is insensitive to the initial point defect concentrations in this temperature range. The relevance of these results to the precipitation process and to the use of thin LT layers in device applications is discussed. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3257-3259 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (2–10 nm) silicon nitride films have been grown by repetitive plasma nitridation of Si using a NH3 remote plasma and deposition of Si by a SiH2Cl2 thermal reaction. The deposition rate is self-limited at nearly half-molecular layer (ML) per one deposition cycle. The process window for the half-ML/cycle of growth has been investigated with respect to the NH3 plasma power, SiH2Cl2 exposure time, and substrate temperature. The thickness fluctuation of the film over a 2 in. wafer is within measurement accuracy of the ellipsometer (± 1.9%) for the atomic layer controlled film while it is ± 8.5% for all the remote-plasma chemical vapor deposition film. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 478-480 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process for the patterned self-assembly of nanometer-scale particles within a solid is described. The process uses crystal strain and composition to guide the formation of arsenic precipitates in GaAs-based epitaxial layers grown at low temperature by molecular beam epitaxy. The lateral particle position is controlled by the strain produced by a surface stress structure while the vertical position is controlled by the epitaxial layer composition. Arsenic particles ∼16-nm in diameter are fabricated in one-dimensional arrays with a 23-nm edge-to-edge particle spacing at a depth of 45 nm below stressors 200 nm in width, thereby demonstrating this technique. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1596-1598 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal optical (LO) phonon relaxation is investigated in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields. We observe LO-phonon assisted tunneling to the ground state as well as to Landau level states. Maxima in the LO-phonon assisted tunnel peak are found each time the LO-phonon energy matches multiple of the Landau level spacing. Corresponding maxima as well as parity effects are found in the integral tunnel conductance. The results indicate enhancement of LO-phonon assisted inter Landau level transitions with increasing magnetic field. © 1996 American Institute of Physics.
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