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  • American Institute of Physics (AIP)  (3)
  • Blackwell Publishing Ltd  (1)
  • Geological Society of America (GSA)
  • Periodicals Archive Online (PAO)
  • Washington, DC : United States Gov. Print. Off.
  • 1995-1999  (4)
  • 1975-1979
  • 1999  (1)
  • 1996  (3)
Collection
Publisher
Years
  • 1995-1999  (4)
  • 1975-1979
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3326-3328 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1607-1609 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field optical microscope (NFOM) has been developed that combines the features of a near-field optical microscope and an atomic force microscope. Improved control over tip-sample separation has led to improved optical imaging and independent surface topography information. The tip oscillation is normal to the sample plane thereby reducing lateral forces—important for nonperturbative imaging of soft samples. Both topographic images and reflection near-field optical images are presented which demonstrate the capability of the system. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3891-3897 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Near-field imaging is a means of exceeding the diffraction limit in optical microscopy to yield subwavelength resolution optical images of a sample surface. In order to achieve such high resolution, it is necessary to scan the measurement probe above the surface at a height of only a few nanometers which requires careful control of the separation between tip and sample. In the implementation of the near-field optical microscope (NFOM) reported here, the distance regulation scheme is based on an inverted noncontact atomic force microscope (AFM) in which a cantilever is used as the sample substrate and imaging is performed with a fiber optic tip. In this way, both the benefits of AFM and NFOM are realized simultaneously. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 126 (1996), S. 0 
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: A simplified model of domain rearrangement in multidomain particles following the application of an alternating (AF) or direct (DF) field is used to quantify the dependence of anisotropy of magnetic susceptibility on magnetic history. To be able to account for changes in the average susceptibility (i.e. The average of three mutually perpendicular susceptibility measurements) of the sample following field treatment, the model has to be refined by introducing interaction between domains. By fitting theoretical curves of anisotropy versus peak AF to experimental results for samples containing different size fractions of magnetite particles, of average grain size ranging from 0.7 to 58 μm, four relevant parameters can be computed (for each sample), which enables a good fit to be obtained. By allowing two of these parameters to change systematically when a DF is applied (and an IRM is acquired), the anisotropy dependence on direct field strength can also be modelled. This includes the sign change observed as the field-impressed ellipsoid changes from prolate to oblate, together with increases in the average susceptibility as the field increases. However, some details, such as discrepancies between predicted and actual increases in the average susceptibility at high fields, suggest that further refinement of the model is required.
    Type of Medium: Electronic Resource
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