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  • American Institute of Physics (AIP)  (8)
  • Genetics Society of America (GSA)  (1)
  • 2010-2014  (1)
  • 1995-1999  (8)
  • 2013  (1)
  • 1998  (4)
  • 1996  (4)
Collection
Publisher
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  • 2010-2014  (1)
  • 1995-1999  (8)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
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  • 2
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 4
    Electronic Resource
    Electronic Resource
    Line-mixing effects in He- and N2-broadened Σ↔Π infrared Q branches of N2O (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 6684-6690 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two Q branches of N2O near 579.3 and 2798 cm−1 belonging to the 2ν20e−ν21f and ν2+ν3 bands, respectively, of Σ←Π and Π←Σ symmetry, have been studied for He and N2 perturbers at pressures ranging from 0.1 to 2 atm, using a tunable diode laser and a difference-frequency laser spectrometer. To interpret the line-mixing effects in these spectra, we have applied a model based on the energy corrected sudden approximation whose parameters have been only derived from line-broadening data for N2O–He and also from the measured absorption by the Q branches for N2O–N2. This model provides a satisfactory agreement with experimental band shapes, whatever the band, the perturber and the pressure considered. Significantly larger line-mixing effects are shown for N2O–He with respect to N2O–N2. Finally, the assumption made in the calculations to treat separately the couplings in the even and odd j levels appears to have a negligible influence on the resulting band shapes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477318
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  • 5
    Electronic Resource
    Electronic Resource
    Simple modeling of line-mixing effects in IR bands. II. Nonlinear molecules applications to O3 and CHClF2 (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2185-2191 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple semiempirical approach is developed in order to model the shape of infrared absorption bands. It is based on use of the strong collision model and of a classical representation of rotational levels. The absorption coefficient then has a simple analytical expression whose wavenumber and pressure dependencies are computed by using eleven parameters which depend on the considered vibrational transition, the temperature, and the nature of the perturber only. These quantities, which are band-averaged values of the detailed spectroscopic and collisional parameters of the molecular system, can be deduced from direct fits of measured spectra. The model thus requires no previous knowledge of the characteristics of the molecules and is thus applicable to complex systems; in particular it seems a promising approach for very dense molecular spectra for which only absorption cross sections are now available. Tests are presented in the case of O3 and CHClF2 bands perturbed by N2 at room temperature for which new measurements have been made. They demonstrate the accuracy of our semiempirical approach in predicting the spectral shape in a wide range of density provided that effective parameters are used. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470974
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368648
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  • 7
    Electronic Resource
    Electronic Resource
    Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368134
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  • 8
    Electronic Resource
    Electronic Resource
    Self-regulated growth of tilted superlattices by atomic layer epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3151-3153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121576
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  • 9
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    Increased Glyoxalase-1 Levels in Fkbp5 Knockout Mice Caused by Glyoxalase-1 Gene Duplication (2013)
    Genetics Society of America (GSA)
    Details
    Publication Date: 2013-08-08
    Description: Fkbp5 is genetically linked to stress-related diseases. Fkbp5 knockout mice are available and widely used to explore the role of Fkbp5 in health and disease. We found that these mice carry a gene duplication of glyoxylase-1, which explains why glyoxylase-1 levels are increased in the Fkbp5 knockout mice.
    Electronic ISSN: 2160-1836
    Topics: Biology
    Published by Genetics Society of America (GSA)
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