ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A one-dimensional ballistic constriction has been fabricated from a two-dimensional electron gas formed at the interface of a GaAs/AlGaAs heterostructure. The constriction was induced via a pair of front gates which also served as a broadband far-infrared (FIR) antenna. The photocurrent through the constriction was recorded as a function of source-drain bias at various FIR frequencies, one-dimensional subband spacings, and for orthogonal FIR polarizations. The photocurrent was compared to the derivative of dc conductance with respect to source-drain bias. While dc rectification is shown to dominate the photocurrent, deviations from this model occur at frequencies above ∼1 THz, yielding an estimate of the upper limit of the electron scattering time in the constriction region. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113705
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